Nonvolatile Memory Programming via Wordline Segmentation
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Solution Overview
Problem
Flash memory devices experience degradation and reliability issues due to capacitive coupling during programming operations, leading to decreased performance and increased cell degradation.
Innovation Solution
A nonvolatile memory device and method that programs data by receiving commands for multiple pages, reading data from a selected wordline, and programming remaining pages to an unselected wordline, reducing capacitive coupling and cell degradation through a specific programming scheme.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a program operation is performed on a selected wordline using high program voltage, then data can be programmed into the memory device, but capacitive coupling between wordlines causes degradation in adjacent memory cells
Solution Approach 1:
The patent divides the programming operation into two separate phases: first programming an unselected wordline, then programming the selected wordline. This segmentation of the programming process allows adjacent memory cells to be protected from capacitive coupling effects by completing the unselected wordline programming before applying high voltage to the selected wordline, thus resolving the contradiction between programming speed and memory cell reliability
Solution Approach 2:
The patent performs preliminary programming of the unselected wordline before programming the selected wordline. By completing the unselected wordline programming in advance, the memory cells in adjacent areas are already programmed and less susceptible to degradation from subsequent high-voltage operations on the selected wordline, thereby improving reliability while maintaining productivity
Data Source
AI summary
A nonvolatile memory device includes a peripheral circuit region and a memory cell region vertically connected with the peripheral circuit region, the peripheral circuit region including at least one first metal pad, and the memory cell region including at least one second metal pad directly connected with the at least one first metal pad. A method of programming the nonvolatile memory device incudes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.