Non-Volatile Memory Dual-Side Voltage Switching for Defect Detection
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Solution Overview
Problem
Semiconductor manufacturing processes face challenges in detecting defects or faults due to increasing complexity and integration, particularly in non-volatile memory devices where defects in components like ground selection lines, word lines, and string selection lines are difficult to identify.
Innovation Solution
A non-volatile memory device design applies voltages to both sides of ground selection lines, word lines, and string selection lines using separate switch circuits to facilitate defect detection by comparing operational parameters such as program loop counts, voltage differences, or time required for voltage stabilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If voltage is applied to only one side of word lines using conventional single switch circuit, then device complexity is reduced, but defect detection capability is insufficient
Solution Approach 1:
The patent divides the voltage application path into two separate segments: one switch circuit connects to one side of the word line, and another switch circuit connects to the other side. This segmentation allows independent testing of each path, enabling comprehensive defect detection while maintaining manageable circuit complexity through modular design
2Measurement precision
If separate switch circuits are used to apply voltage to both sides of word lines, then defect detection precision is improved, but device complexity increases
Solution Approach 1:
The patent employs symmetric duplicate circuits: first pass transistors mirror second pass transistors, and first switch circuits mirror second switch circuits. This copying approach enables precise defect detection by comparing identical circuit behaviors under the same test conditions, while the regularity of the duplicated structures actually simplifies manufacturing and testing processes
3Reliability
If voltage is applied to both sides of ground selection line and string selection line, then defect detection coverage is improved, but manufacturing complexity increases
Solution Approach 1:
The patent designs universal switch circuits and pass transistors that can be reused across multiple word lines, ground selection lines, and string selection lines. Each switch circuit and transistor pair serves multiple lines simultaneously, enabling comprehensive defect detection coverage while reducing the total number of discrete components and simplifying the manufacturing process through standardized multi-functional building blocks
Data Source
AI summary
A non-volatile memory device includes a memory cell array including a plurality of memory cells respectively connected to a plurality of word lines; a plurality of first pass transistors each connected to one side of one of the plurality of word lines; a plurality of second pass transistors each connected to the other side of one of the plurality of word lines; a voltage generator configured to generate a plurality of operating voltages and to apply the plurality of operating voltages to the memory cell array; in response to a first switch control signal, a first switch circuit configured to connect the plurality of first pass transistors to the voltage generator; and in response to a first switch control signal, a second switch circuit configured to connect the plurality of second pass transistors to the voltage generator.