Nonvolatile Semiconductor Circuit Level Shifting via Voltage Control Unit

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Existing nonvolatile semiconductor memory circuits face challenges in area efficiency due to the substantial footprint of cross-coupled type sense amplifiers used for level shifting, which complicates layout and disposal.

Innovation Solution

A nonvolatile semiconductor integrated circuit that includes a memory cell array with a current sensing unit, a voltage control unit, and a latch unit, where the voltage control unit uses a switching element and a coupling element to level-shift the sensing voltage without a separate level shifter, regulating the output voltage to a lower level for efficient use in the circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If a cross-coupled type sense amplifier is used for level shifting, then the sensing voltage can be converted to a lower voltage level, but the circuit footprint increases substantially

Engineering Contradiction:

Improvevoltage level conversion capabilityVSAvoidcircuit footprint

Core Design Contradiction:

PowerVSArea of stationary object

Solution Approach 1:

The patent extracts the level shifting function from the traditional cross-coupled sense amplifier and implements it using a simplified voltage control unit with switching elements and coupling capacitors. This separates the voltage conversion function from the sensing function, achieving level shifting with minimal circuit area while maintaining the essential sensing capability.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The voltage control unit is designed to perform multiple functions: it converts the sensing voltage to a lower level, maintains the high voltage level for data storage, and provides efficient voltage level management for different circuit operations. This multi-functional design eliminates the need for separate level shifter circuits.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If a separate level shifter is added to convert sensing voltage to cell voltage level, then voltage compatibility is achieved, but device complexity increases

Engineering Contradiction:

Improvevoltage level compatibilityVSAvoidcircuit structure complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent merges the level shifting function with the existing voltage control unit, eliminating the need for a separate level shifter. The switching elements and coupling capacitors are integrated into the voltage control architecture, achieving voltage level compatibility while simplifying the overall device structure.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The patent introduces coupling capacitors as intermediary elements that enable voltage level conversion between the high voltage sensing domain and the low voltage cell domain. These capacitors act as mediators that transfer voltage information between different voltage levels without requiring complex conversion circuits.

Inventive Principle:

Principle #24Intermediary (Mediator)

Data Source

PatentUS8531864B2Nonvolatile semiconductor integrated circuit for controlling sensing voltage

Publication Date: 2013.09.10 SK HYNIX INC

AI summary

A nonvolatile semiconductor integrated circuit includes a memory cell array configured to include each of memory cells having a variable resistor; a current sensing unit configured to convert a current which depends on the variable resistor of a corresponding memory cell, into a sensing voltage; and a voltage control unit configured to receive the sensing voltage for a predetermined time in response to a sensing control signal, regulate the received sensing voltage, and provide a sensing output voltage.