Non-Volatile TCAM Cell Using Variable Impedance Memory Units
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Solution Overview
Problem
Traditional ternary content addressable memories (TCAM) implemented with SRAM cells are energy-consuming due to their volatility and require more than ten transistors, necessitating a more efficient and stable solution.
Innovation Solution
A ternary content addressable memory design incorporating variable impedance passive components, such as variable resistors or capacitors, connected to control and data transistors, allowing for non-volatile operation with high stability and reduced energy consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional SRAM-based TCAM is used, then search operations can be performed, but energy consumption increases and volatility occurs
Solution Approach 1:
The patent changes the fundamental parameter of memory cell type from volatile SRAM to non-volatile resistive memory, fundamentally altering the energy consumption and stability characteristics of the TCAM system
Solution Approach 2:
The patent replaces the traditional transistor-based SRAM mechanism with a resistive memory mechanism that uses resistance changes to store data, eliminating the need for continuous refresh operations and reducing energy consumption
2Adaptability or versatility
If traditional SRAM-based TCAM is used, then search functionality is achieved, but device complexity increases with more than ten transistors per cell
Solution Approach 1:
The patent extracts the matching logic functionality from the memory cell structure itself, allowing the resistive memory array to perform search operations inherently through its resistance characteristics, thereby reducing the need for additional transistors per cell
Solution Approach 2:
The patent makes the memory cell itself multi-functional by enabling it to perform both data storage and search operations, eliminating the need for separate matching logic circuits and reducing overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed memory achieves high stability, a wide memory window, and significantly reduces energy consumption while maintaining efficient data search and matching capabilities.
Implementation Method 1
a capacitive component with an electron capturing capability and a fixed dielectric constant
Data Source
AI summary
The present disclosure provides a ternary content addressable memory, which includes a first memory unit and a second memory unit, and the second memory unit is electrically connected to the first memory unit. The first memory unit includes a control transistor and a first variable impedance passive component. One end of the first variable impedance passive component is electrically connected to the gate of the control transistor. The second memory unit includes a data transistor and a second variable impedance passive component. The data transistor is connected in series with the control transistor, and one end of the second variable impedance passive component is electrically connected to the gate of the data transistor.