Normally Off HEMT via P-Type Pattern and 2DEG Control
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Solution Overview
Problem
Conventional high-electron-mobility transistors (HEMTs) with 'normally on' characteristics have high power consumption due to their design, which is not suitable for applications requiring high breakdown voltage and fast response speeds.
Innovation Solution
A high-electron-mobility transistor device with a 'normally off' characteristic is achieved by forming a two-dimensional electron gas (2DEG) layer in semiconductor layers, using etch-stop layers, and a p-type semiconductor layer pattern, along with a gate electrode, to control current flow and minimize power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a conventional HEMT device with heterogeneous junction is used, then high breakdown voltage and fast response speeds are achieved, but the device has normally on characteristic and high power consumption
Solution Approach 1:
The patent changes the electrical characteristics of the semiconductor layer by introducing a first doped region with different conductivity type and doping concentration, thereby transforming the device from normally-on to normally-off mode while maintaining high breakdown voltage through controlled carrier distribution
Solution Approach 2:
The patent applies local doping modifications only in specific regions (first doped region) of the semiconductor layer, creating localized changes in electrical properties without affecting the overall structure, enabling normally-off characteristic while preserving high breakdown voltage in other regions
2Use of energy by moving object
If a p-type semiconductor layer pattern is added to achieve normally off characteristic, then power consumption is reduced, but device structure becomes more complex
Solution Approach 1:
The patent merges the first doped region with the existing semiconductor layer structure, integrating the normally-off control mechanism into the channel layer itself rather than adding completely separate components, thereby reducing overall device complexity while achieving power consumption reduction
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a stable 'normally off' HEMT device with reduced power consumption and improved performance in high breakdown voltage and fast response applications, minimizing current leakage and on-resistance.
Implementation Method 1
a semiconductor layer with relatively great polarizability in the HEMT device may cause another semiconductor layer bonded heterogeneously thereto to have two-dimensional electron gas (2 DEG), i.e., a gas of electrons free to move in two dimensions but tightly confined in the third dimension
Implementation Method 2
An HEMT device includes semiconductor layers with different electrical polarization characteristics
Implementation Method 3
a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern
Data Source
AI summary
A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.