Notched Source Electrode and Connector Lead for Semiconductor Package Alignment
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Solution Overview
Problem
In semiconductor devices, particularly vertical-type MOSFETs, the overlap of source metal and source connector corner portions complicates position alignment, leading to difficulties in bonding and can result in inadequate heat dissipation due to voids in the bonding material, potentially causing heat concentration and chip failure.
Innovation Solution
The semiconductor device incorporates notch portions on the semiconductor chip's corners and bonding material, facilitating alignment and bonding of the source metal and source connector, while avoiding areas without semiconductor elements to enhance heat dissipation and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If corner portions of source metal and source connector overlap to maximize bonding area, then bonding strength is improved, but position alignment becomes difficult and voids form in bonding material
Solution Approach 1:
The corner portions are segmented into overlapping and non-overlapping regions. The overlapping regions provide bonding strength, while the non-overlapping regions provide alignment references. This segmentation allows both bonding strength and alignment precision to be achieved simultaneously.
Solution Approach 2:
The design uses asymmetric corner portions where one connector corner overlaps with the electrode corner while the other corners remain non-overlapping. This asymmetric configuration provides both bonding area and alignment reference, resolving the contradiction between bonding strength and alignment precision.
2Temperature
If bonding material is placed in corner portions to maximize heat dissipation, then heat dissipation is improved, but voids form due to alignment difficulties
Solution Approach 1:
The corner portions are divided into overlapping and non-overlapping regions. Bonding material is placed only in the non-overlapping regions where alignment is precise, ensuring reliable heat dissipation without voids. The overlapping regions serve as alignment references.
Solution Approach 2:
Different regions have different functions: non-overlapping regions are optimized for bonding material placement and heat dissipation, while overlapping regions are optimized for alignment reference. This local quality differentiation ensures both heat dissipation and reliability.
3Reliability
If source metal and source connector are bonded with maximum overlap, then electrical connection is improved, but alignment precision deteriorates
Solution Approach 1:
The corner portions are segmented into overlapping and non-overlapping regions. The overlapping regions ensure electrical connection reliability, while the non-overlapping regions provide alignment precision. This segmentation resolves the contradiction between electrical connection and alignment precision.
Solution Approach 2:
The asymmetric corner portion design allows one connector corner to overlap with the electrode corner for electrical connection, while other corners remain non-overlapping for alignment reference, achieving both electrical reliability and alignment precision.
Data Source
AI summary
Provided is a semiconductor device including: a semiconductor chip having a rectangular region including a first corner portion having a first notch portion, a second corner portion being provided to diagonally face the first corner portion, a third corner portion, and a fourth corner portion being provided to diagonally face the third corner portion on a surface and having a semiconductor element formed in the rectangular region; a first electrode including a fifth corner portion being provided on the first corner portion and having a second notch portion, a sixth corner portion being provided on the second corner portion, a seventh corner portion being provided on the third corner portion, and an eighth corner portion being provided on the fourth corner portion, the first electrode being provided on the semiconductor element, and the first electrode being electrically connected to the semiconductor element; and a first connector including a ninth corner portion being provided on the fifth corner portion and having a third notch portion and a twelfth corner portion being provided on the eighth corner portion, the first connector being provided on the first electrode, and the first connector being electrically connected to the first electrode.