Novel Acid Generator for Lithography Resist Patterns
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Solution Overview
Problem
Current acid generators for chemically-amplified resists, such as onium salt-based systems, face challenges with the persistence of perfluoroalkyl chains, which affect acid diffusion and bioaccumulation, necessitating a more suitable acid generator for advanced lithography techniques.
Innovation Solution
A novel acid generator compound represented by a specific general formula is introduced, comprising a hydrocarbon group, an alkylene or fluorinated alkylene group, and an organic cation with a nitrogen atom, designed to enhance acid generation and solubility in alkali developing solutions for improved resist pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If perfluoroalkyl chain-based acid generators are used, then acid generation capability is improved, but persistence and bioaccumulation problems occur
Solution Approach 1:
The patent changes the chemical parameters of the acid generator by replacing perfluoroalkyl chains with alternative structures (such as carboxylic acid-based compounds or other non-persistent acid sources), thereby maintaining acid generation capability while eliminating persistence and bioaccumulation issues
Solution Approach 2:
The invention adopts acid generators that are designed to be non-persistent and environmentally friendly, replacing long-lived perfluoroalkyl-based compounds with shorter-lived, biodegradable alternatives that do not accumulate in the environment
2Illumination intensity
If PHS-based resins are used, then transparency to KrF excimer laser is improved, but resolution for shorter wavelength light deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the base resin by replacing PHS-based resins with acrylic resins containing (meth)acrylate ester structural units, which provide both adequate transparency and improved resolution for shorter wavelength lithography
Solution Approach 2:
The invention uses composite resin structures combining (meth)acrylate ester units with specific acid dissociable groups, creating a material that balances optical transparency and patterning resolution for advanced lithography applications
3Stability of the object's composition
If perfluoroalkyl chains are used in acid generators, then acid diffusion control is improved, but handling safety deteriorates
Solution Approach 1:
The patent modifies the molecular structure parameters by replacing perfluoroalkyl chains with alternative acid generation systems that provide sufficient acid diffusion control through different mechanisms, thereby improving handling safety without sacrificing performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel acid generator compound improves the resolution and handling of resist patterns, particularly in advanced lithography processes using shorter wavelengths, by optimizing acid generation and solubility, addressing the limitations of persistent perfluoroalkyl chains in existing acid generators.
Implementation Method 1
an acid generator that generates acid upon exposure
Implementation Method 2
an acid generator component (B) which generates an acid upon exposure
Data Source
AI summary
There is provided a compound represented by a general formula (B1-1) shown below, an acid generator composed of the above compound, a resist composition containing an acid generator composed of the above compound, and a method of forming a resist pattern:(wherein RX represents a hydrocarbon group which may contain a substituent group; Q1 represents an alkylene group of 1 to 12 carbon atoms which may contain a substituent group, or a single bond; n represents an integer of 0 or 1; Y1 represents an alkylene group of 1 to 4 carbon atoms, or a fluorinated alkylene group of 1 to 4 carbon atoms; and A+ represents an organic cation which contains a nitrogen atom).


