Nozzle Ceiling and Side Holes for Film Thickness Uniformity
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Solution Overview
Problem
Existing substrate processing techniques face challenges in achieving uniform film thickness across multiple substrates due to inadequate gas distribution, leading to variations in film thickness and in-plane uniformity.
Innovation Solution
The implementation of a substrate processing apparatus with a nozzle configuration that includes a larger ceiling hole and multiple side holes for gas supply, ensuring uniform gas distribution and increased concentration of precursor gases, such as HCDS, across the substrate arrangement region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional nozzle configuration is used, then the device complexity is low, but the film thickness uniformity deteriorates
Solution Approach 1:
The nozzle is divided into multiple functional regions with different hole configurations: a ceiling portion with a large opening area and side portions with smaller opening areas. This segmentation allows different parts of the nozzle to perform different functions - the ceiling region provides main gas flow while the side regions provide supplementary flow, achieving uniform film thickness without excessive complexity
Solution Approach 2:
Different regions of the nozzle are given different opening areas tailored to local requirements. The ceiling portion has a larger opening area to provide sufficient precursor gas to the upper substrate region, while side portions have smaller opening areas to provide gas to lower regions. This local quality differentiation resolves the uniformity issue without requiring complete redesign of the entire nozzle
2Manufacturing precision
If gas supply is increased to improve film thickness uniformity, then the film thickness uniformity improves, but the gas distribution uniformity may deteriorate
Solution Approach 1:
The nozzle design transitions from a single-plane gas distribution approach to a three-dimensional distribution system with holes at different heights and orientations (ceiling and side portions). This dimensional expansion allows gas to be supplied from multiple spatial directions, achieving both sufficient gas concentration and uniform distribution across the substrate arrangement region
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves wafer-to-wafer film thickness uniformity and in-plane film thickness uniformity by ensuring sufficient gas supply to all substrates, reducing thickness variations and achieving a more uniform film distribution.
Implementation Method 1
a first ceiling hole provided at a ceiling portion of the first nozzle and opened in a vertical direction, and a plurality of first side holes provided at a side portion of the first nozzle and opened in a horizontal direction
Implementation Method 2
a second nozzle configured to supply a reactant to the substrate in the process chamber
Implementation Method 3
a process chamber in which a process is performed to a substrate, the process including forming a film containing a main element
Data Source
AI summary
There is provided a technique that includes a process chamber in which a process is performed to a substrate, the process including forming a film containing a main element, a first nozzle configured to supply a precursor containing the main element to the substrate in the process chamber, and a second nozzle configured to supply a reactant to the substrate in the process chamber. The first nozzle includes a first ceiling hole provided at a ceiling portion of the first nozzle and opened in a vertical direction, and a plurality of first side holes provided at a side portion of the first nozzle and opened in a horizontal direction. An opening area of the first ceiling hole is larger than an opening area of each of the plurality of first side holes.