Substrate Processing Nozzle Deposit Suppression via Cyclic Gas Supply
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Solution Overview
Problem
In semiconductor device manufacturing, the decomposition of gases within long nozzles used for film formation leads to deposits adhering to the nozzle walls, causing maintenance issues and potential impurities in the film due to particle generation.
Innovation Solution
A method involving alternately supplying a source gas and a reactive gas to substrates while controlling parameters such as supply time, pressure, and temperature within the nozzle to suppress deposit formation, including limiting the supply time of the source gas to 20 seconds or less, maintaining a pressure of 50 Pa or less, and keeping the process temperature at 500°C or less, with a maximum of 100 continuous cycles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gas is supplied through a long nozzle into the process chamber, then film formation can be performed on stacked substrates, but deposits generated by decomposing the gas may adhere to the inner wall of the long nozzle
Solution Approach 1:
The patent applies parameter changes by controlling the supply time of source gas to 20 seconds or less per cycle, maintaining pressure at 50 Pa or less, and limiting the number of continuous cycles to 100 or less. These parameter adjustments prevent thermal decomposition of the source gas in the long nozzle, thereby suppressing deposit formation while still enabling film formation on stacked substrates
Solution Approach 2:
The patent implements periodic action by alternately supplying source gas and reactive gas in cyclic batches. Each cycle consists of source gas supply followed by reactive gas supply, with the source gas supply time controlled to 20 seconds or less. This periodic, interrupted supply pattern prevents continuous thermal decomposition in the nozzle while maintaining film formation capability across multiple substrates
2Productivity
If the source gas is supplied for a long duration or at high pressure, then film formation efficiency is improved, but thermal decomposition of the gas increases leading to more deposits
Solution Approach 1:
The patent optimizes parameters by limiting source gas supply time to 20 seconds or less per cycle and maintaining pressure at 50 Pa or less. These parameter changes prevent thermal decomposition while maintaining adequate film formation efficiency through the cyclic batch process
Solution Approach 2:
The patent maintains continuity of useful action by performing multiple cycles (up to 100 continuous cycles) of alternating source gas and reactive gas supply. This continuous cyclic operation achieves cumulative film formation on all stacked substrates without requiring long continuous source gas supply that would cause decomposition
3Ease of manufacture
If deposits adhere to the nozzle inner wall, then maintenance operations are required, but particles may be generated and contaminate the film
Solution Approach 1:
The patent applies preliminary anti-action by controlling source gas supply parameters (20 seconds or less per cycle, 50 Pa or less pressure) to prevent thermal decomposition and deposit formation in the first place. This preventive approach eliminates the need for maintenance operations and prevents particle generation that would contaminate the film
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the adhesion of decomposed gas components to the nozzle walls, minimizing maintenance needs and preventing particle contamination in the film, thereby enhancing the reliability and purity of the semiconductor device manufacturing process.
Implementation Method 1
the gas used for the film-forming process may be thermally decomposed in the long nozzle, and deposits generated by decomposing the gas may adhere to an inner wall of the long nozzle
Implementation Method 2
supplying a reactive gas capable of reacting with the source gas into the process chamber... to form a film on the plurality of substrates
Data Source
AI summary
Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500° C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.