Nozzle Plate Anisotropic Etching Shape Precision
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Solution Overview
Problem
The existing methods for manufacturing nozzle plates with minute nozzle orifices for high-resolution inkjet printing fail to achieve the desired size and shape precision, leading to suboptimal printing quality due to excessive etching mask pattern deformation during the anisotropic etching process.
Innovation Solution
Optimizing the anisotropic etching process by controlling the etching depth per cycle (D) to be less than 0.1 times the diameter (R) of the etching mask pattern, combined with alternating etching and side wall protection film formation, and applying a liquid repellent layer to maintain the opening shape equivalence to the etching mask pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If anisotropic etching process with alternating etching and side wall protection film formation is used, then deep groove formation capability is improved, but the opening shape of the ejection port deviates from the etching mask pattern
Solution Approach 1:
The patent changes the etching depth parameter D to satisfy the conditional relationship D≤0.1×R, where R is the diameter of the etching mask pattern opening. This parameter control ensures that lateral etching remains minimal while still achieving the required groove depth through repeated cycles, thereby maintaining opening shape precision despite using anisotropic etching.
Solution Approach 2:
The patent employs periodic alternating cycles of etching and side wall protection film formation. By controlling the etching depth per cycle to be small (D≤0.1×R), each cycle contributes incrementally to the total groove depth while preserving the opening shape. The repeated periodic action accumulates depth without significant lateral deviation.
2Productivity
If etching depth per cycle is increased to improve productivity, then processing time is reduced, but opening shape precision deteriorates
Solution Approach 1:
The patent uses periodic cycles of etching and side wall protection film formation with controlled etching depth D≤0.1×R per cycle. This approach balances productivity and precision by accumulating groove depth through multiple small steps rather than one large etching step, preventing opening shape distortion while achieving the required total depth.
Solution Approach 2:
The patent optimizes the etching depth parameter D to satisfy D≤0.1×R, where R is the mask pattern opening diameter. This parameter setting ensures that each etching cycle removes material at a rate that maintains opening shape fidelity, while the total processing time remains acceptable due to the efficiency of the anisotropic etching process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures the formation of nozzle plates with through holes having an opening shape equivalent to the etching mask pattern, enhancing the precision and quality of the nozzle orifices, thereby improving high-resolution printing capabilities.
Implementation Method 1
a through hole whose one opening is an ejection port ejecting liquid is arranged on a Si substrate by an anisotropic etching process in which etching and side wall protection film formation are alternately repeated
Implementation Method 2
etching and side wall protection film formation are alternately repeated
Data Source
AI summary
Provided is a method for manufacturing a nozzle plate which has a through hole having an ejection port. In the method, the through hole, which has one opening as an ejection port for ejecting the liquid, is arranged on a Si substrate by an anisotropic etching method wherein etching and side wall protection film formation are alternately repeated to the Si substrate and the following steps are performed in the following order; forming a film to be an etching mask on a surface of the Si substrate whereupon the ejection port is to be formed, forming the etching mask pattern having an opening for forming the thorough hole by performing photolithography and etching to a film to be the etching mask, and performing the etching by the anisotropic etching method by satisfying the conditional expression.