Nozzle Protrusion Structure for Low-Loss Wafer Gas Injection
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the inefficient injection of process gases or precursors from nozzles to substrates, leading to significant loss and difficulties in achieving step coverage on substrates with reduced thickness and pattern line widths.
Innovation Solution
A batch-type semiconductor manufacturing apparatus is designed with a boat, inner tube, nozzle, nozzle tube, and nozzle protrusion, where the nozzle protrusion extends to minimize gas loss by injecting process gases directly onto the substrate through slit openings, optimizing gas flow and reducing flux loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a conventional nozzle is used to inject process gas to the substrate, then the structure is simple, but the injection efficiency is low and gas loss is significant
Solution Approach 1:
The patent introduces a nozzle protrusion that extends in a direction perpendicular to the substrate surface (second direction), creating a three-dimensional gas delivery path. This dimensional extension allows the process gas to be delivered more directly to the substrate while minimizing lateral dispersion and loss, thereby improving injection efficiency without significantly complicating the overall nozzle structure.
Solution Approach 2:
The nozzle protrusion acts as an intermediary component between the main nozzle body and the substrate. It serves as a transition element that guides the process gas from the nozzle and directs it toward the substrate surface, improving gas delivery efficiency and reducing gas loss while maintaining structural simplicity.
2Manufacturing precision
If the nozzle is positioned far from the substrate, then the structure is simple, but the injection efficiency is low
Solution Approach 1:
Instead of simply moving the nozzle closer to the substrate in the vertical direction, the patent extends the nozzle in the horizontal direction (second direction perpendicular to substrate) to reach closer to the substrate surface. This dimensional change allows for improved injection efficiency while maintaining a reasonable overall nozzle-to-substrate distance.
3Manufacturing precision
If process gas is injected without optimized flow path, then the structure is simple, but gas distribution uniformity is poor
Solution Approach 1:
The nozzle protrusion creates a localized optimized flow path specifically at the region where gas delivery to the substrate is most critical. By concentrating the structural modification at the nozzle tip rather than redesigning the entire gas delivery system, the patent improves gas distribution uniformity while minimizing overall structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the injection efficiency of process gases, reducing gas loss and improving the uniformity of gas distribution across substrates, thereby improving the semiconductor manufacturing process.
Implementation Method 1
a process gas to be provided to the substrate moves through a nozzle extending in the first direction
Data Source
AI summary
There is provided, a semiconductor manufacturing apparatus which reduces loss of a process gas or a precursor transferred from a nozzle to a wafer by improving the injection efficiency of the process gas or the precursor from the nozzle to the substrate. The semiconductor manufacturing apparatus includes a boat on which a substrate is loaded in a first direction, an inner tube which covers the boat, a nozzle which extends in the first direction and through which a process gas to be provided to the substrate moves, a nozzle tube which surrounds the nozzle and comprises a gas injection hole for injecting the process gas toward the substrate, and a nozzle protrusion which is connected to the gas injection hole and extends in a second direction, wherein a shortest distance from an end of the nozzle protrusion to the substrate is greater than 0 mm and less than 9 mm.