NPN Light Emitting Element for Display Device Material Efficiency
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Solution Overview
Problem
Existing display devices face inefficiencies in material usage and defects due to reverse light emitting elements, leading to heat generation and reduced lifespan.
Innovation Solution
The display device incorporates a light emitting element with a semiconductor core having NPN or PNP junctions, where the semiconductor layers are doped with specific polarities, and an insulating film with contact holes for precise alignment, preventing non-lighting defects and improving material efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If a conventional light emitting element structure is used, then manufacturing is simpler, but material efficiency is poor and non-lighting defects occur
Solution Approach 1:
The light emitting element is segmented into multiple semiconductor layers with different polarities (first semiconductor layer, third semiconductor layer, second semiconductor layer) arranged in a specific sequence. This segmentation allows precise control of current flow and prevents reverse light emission, thereby improving material efficiency by ensuring all materials contribute to functional light emission.
Solution Approach 2:
Different semiconductor layers are doped with different polarities (first dopant for first and second layers, second dopant for third layer) to create localized electrical properties. This local quality differentiation ensures proper charge carrier injection and transport at each interface, preventing non-lighting defects and improving overall material utilization.
2Manufacturing precision
If alignment precision is relaxed, then manufacturing is easier, but non-lighting defects increase
Solution Approach 1:
An insulating film is formed beforehand surrounding the semiconductor layers, and contact holes are created in this insulating film before electrode deposition. This preliminary action establishes precise alignment references that guide subsequent manufacturing steps, ensuring accurate positioning of electrodes relative to the semiconductor layers while maintaining ease of manufacture through a systematic process flow.
Solution Approach 2:
The insulating film acts as an intermediary layer between the semiconductor structure and the electrodes. It provides a controlled interface that facilitates precise alignment through contact holes, mediating the connection between the semiconductor layers and external electrodes while preventing direct contact that could cause defects.
3Reliability
If reverse light emitting elements are not prevented, then device structure is simpler, but heat generation increases and lifespan decreases
Solution Approach 1:
Instead of allowing reverse light emission and then correcting it, the invention inverts the approach by designing the semiconductor layer configuration from the outset to prevent reverse emission. The specific arrangement of n-type and p-type layers with appropriate doping creates inherent directional current flow, eliminating the reverse emission problem before it can occur and thereby extending device lifespan while reducing heat generation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances material efficiency by preventing non-lighting defects and reducing heat generation, thereby extending the lifespan of the display panel.
Implementation Method 1
The first semiconductor layer of the light emitting element and the second semiconductor layer of the light emitting element may be doped with a first dopant having a first polarity, and the third semiconductor layer of the light emitting element is doped with a second dopant having a second polarity different from the first polarity
Implementation Method 2
a light emitting element including a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer
Data Source
AI summary
A display device includes a light emitting element including a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer; a first contact electrode electrically connected to the first semiconductor layer of the light emitting element; a second contact electrode electrically connected to the second semiconductor layer of the light emitting element; and a third contact electrode disposed between the first contact electrode and the second contact electrode and electrically connected to the third semiconductor layer of the light emitting element, wherein the first semiconductor layer of the light emitting element and the second semiconductor layer of the light emitting element are doped with a first dopant having a first polarity, and the third semiconductor layer of the light emitting element is doped with a second dopant having a second polarity different from the first polarity.