Data Logging Device NVRAM Ring-Buffer Endurance
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Solution Overview
Problem
Current data logging systems in vehicles with ADAS and autonomous driving features face challenges in storing large amounts of data with high endurance and write speed, as existing solutions like EEPROMs have limited capacity and NAND flash devices have limited endurance.
Innovation Solution
A Data Logging Device combining a computing unit with a non-volatile random-access memory (NVRAM) region and a ring-buffer, which allows continuous overwriting of data, providing high capacity, high write speed, and infinite endurance, with data being transferred to a persistent memory region upon trigger events for safe storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If NAND flash devices are used for high capacity storage, then storage capacity is improved, but endurance deteriorates due to limited program/erase cycles
Solution Approach 1:
The storage system is segmented into two distinct parts: a volatile memory region for high-speed sequential writing and a non-volatile memory region for persistent storage. This segmentation allows each part to specialize in different functions, with the volatile memory handling frequent writes and the non-volatile memory providing durable storage, thereby resolving the contradiction between capacity and endurance.
Solution Approach 2:
A controller acts as an intermediary between the computing unit and the storage regions, managing data transfer and coordination. The controller orchestrates the writing process by first storing data in volatile memory and then transferring it to non-volatile memory, enabling the system to achieve both high write speed and high endurance through coordinated operation of the two memory types.
2Quantity of substance
If sequential writing on NAND flash is used, then storage capacity is improved, but write speed deteriorates due to sequential processing requirements
Solution Approach 1:
The storage system is segmented into a volatile memory region for high-speed writing and a non-volatile memory region for persistent storage. The volatile memory region enables parallel and high-speed sequential writing, while the non-volatile memory region provides durable storage capacity, thereby resolving the contradiction between write speed and storage capacity.
3Speed
If ring-buffer storage is used to enable continuous overwriting, then write speed is improved, but data retention capability deteriorates due to continuous overwriting requirements
Solution Approach 1:
The storage system is segmented into a volatile memory region for high-speed ring-buffer writing and a non-volatile memory region for persistent data retention. The volatile memory region enables continuous overwriting at high speed, while the non-volatile memory region ensures data retention even after power loss, thereby resolving the contradiction between write speed and data retention capability.
4Reliability
If EEPROM is used for high endurance storage, then endurance is improved, but storage capacity deteriorates due to limited Megabyte range
Solution Approach 1:
The storage system is segmented into a non-volatile memory region for high-endurance persistent storage and a volatile memory region for high-speed writing. The non-volatile memory region provides endurance comparable to EEPROM, while the volatile memory region adds significant storage capacity, thereby resolving the contradiction between endurance and storage capacity.
Data Source
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AI summary
Disclosed is an Data Logging Device including a computing unit (CU) and a primary storage with at least one non-volatile random-access memory (NVRAM) region, wherein the CU is configured to collect data, at least one ring-buffer is implemented in said NVRAM region, the ring-buffer is configured to store the data, and the CU and the primary storage are connected by a data interface and configured to transfer the data from the CU to the ring-buffer.