Non-Volatile Memory Ion Implantation for Threshold Voltage Regulation
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Solution Overview
Problem
Non-volatile memory devices face challenges with prolonged data rewriting times, limited storage capacity, and voltage level inconsistencies due to tunnel oxide film damage from repeated program and erase operations, affecting the reliability of read, write, erase, and program operations.
Innovation Solution
A method of manufacturing non-volatile memory devices by forming an ion implantation area with a higher doping concentration between the floating gate and control gate to regulate the program threshold voltage, ensuring a consistent voltage level difference between program and erase voltages, thereby increasing the durability and reliability of the memory device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ion implantation area with higher doping concentration is formed to regulate program threshold voltage, then program threshold voltage is increased and voltage level difference is maintained, but manufacturing process complexity increases
Solution Approach 1:
The patent merges the ion implantation process with the existing manufacturing workflow by forming the ion implantation area in the channel region during the same fabrication sequence. This integration approach maintains voltage level stability while minimizing additional manufacturing process complexity
Solution Approach 2:
The ion implantation area is formed locally in the channel region between the floating gate and control gate, affecting only the specific area needed for threshold voltage regulation. This localized approach achieves the desired voltage stability without requiring complex global process changes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the durability and reliability of non-volatile memory devices by maintaining a stable voltage level difference between program and erase voltages, preventing tunnel oxide film damage and ensuring reliable operations over a longer retention lifetime.
Implementation Method 1
an ion implantation area for regulating a program threshold voltage of the first conductivity type integrally formed between an area underneath of the floating gate and the control gate and a foreside of the well region
Data Source
AI summary
A non-volatile memory device includes a semiconductor substrate, a well region situated on the semiconductor substrate, a floating gate situated on the well region, a floating gate channel region, a control gate situated on both sides of the floating gate, a control gate channel region, and an ion implantation area for regulating a program threshold voltage integrally formed between an area underneath of the floating gate and the control gate and a foreside of the well region, wherein a doping concentration of the ion implantation area for regulating a program threshold voltage is greater than a doping concentration of the well region. Therefore, the non-volatile memory device of examples integrally forms an ion implantation area for regulating a program threshold voltage irrespective of a channel region of a floating gate and a control gate so as to guarantee durability of a non-volatile memory device.