Non-Volatile Memory Zone Segmentation for Wear Reduction
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Solution Overview
Problem
Existing storage devices face reduced lifespan and available storage capacity due to frequent garbage collection and random access, which can be mitigated by distinguishing memory blocks into zones for sequential data storage.
Innovation Solution
A storage device with a non-volatile memory divided into zones for sequential data storage, utilizing a write pointer to indicate the position for writing data, and a storage controller that manages task requests to perform write operations only when the write pointer matches the logical block address.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If random access is implemented in non-volatile memory, then data access flexibility is improved, but garbage collection frequency increases and device lifespan decreases
Solution Approach 1:
The non-volatile memory is divided into multiple zones (first zone, second zone, etc.) with each zone containing multiple blocks. This segmentation allows the system to perform sequential writes within zones while maintaining the ability to handle random access requests by directing them to appropriate zones, thereby reducing garbage collection frequency and extending device lifespan.
2Adaptability or versatility
If a large over provisioning area is allocated for garbage collection and wear leveling, then memory management capability is improved, but available storage capacity is reduced
Solution Approach 1:
The memory is divided into zones that can be independently managed for sequential writes. This segmentation allows the controller to efficiently manage write operations within each zone without requiring large over-provisioning areas, as the sequential write pattern naturally reduces the need for garbage collection and wear leveling operations.
Solution Approach 2:
The system preliminarily organizes data into sequential write patterns by matching task requests with the write pointer position before writing to memory. This preliminary organization reduces the need for subsequent garbage collection and wear leveling operations, thereby reducing the required over-provisioning area while maintaining effective memory management.
3Speed
If write operations are performed without aligning with write pointer position, then write operation speed is improved, but memory wear increases and storage capacity is reduced
Solution Approach 1:
The controller preliminarily checks whether the logical block address in the task request matches the write pointer position before executing the write operation. This preliminary alignment ensures that writes occur at the correct sequential position, preventing premature wear while maintaining efficient write performance by avoiding unnecessary read-modify-write cycles.
Data Source
AI summary
An example embodiment provides a storage device including: a non-volatile memory including a plurality of zones configured to sequentially store data using a write pointer indicating a position to write data; and a storage controller configured to receive a plurality of task requests respectively including a logical block address and a write command, and perform a write operation corresponding to the write command of a first task request among the plurality of task requests to the non-volatile memory in response to a position of the write pointer matching a first logical block address corresponding to the first task request.