Non-Volatile Memory Block Classification for Error Rate Reduction
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Solution Overview
Problem
Non-volatile data storage devices face errors due to variations in storage characteristics over time, such as charge leakage and disturbances from nearby cells, which increase as storage density and feature size shrink, requiring effective management of configuration parameters to reduce error rates.
Innovation Solution
A method and system for managing configuration parameters by grouping blocks based on retention times and using predetermined ranges for erase dwell times and read voltage thresholds, reducing resource intensity and overhead compared to per-block management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If configuration parameters are managed separately for each block to account for arbitrary variations, then error rates are reduced, but resource intensity and overhead increase
Solution Approach 1:
The patent applies local quality by adjusting configuration parameters (such as read voltage thresholds and erase dwell times) specifically for blocks exhibiting abnormal retention characteristics, rather than uniformly managing all blocks. This targeted approach reduces error rates for problematic blocks while avoiding unnecessary resource expenditure on blocks that already meet performance specifications.
Solution Approach 2:
The patent utilizes parameter changes by dynamically modifying configuration parameters based on measured retention times. Blocks with abnormal retention characteristics receive adjusted parameters (e.g., modified read voltage thresholds or erase dwell times) to compensate for their specific deficiencies, thereby reducing error rates without requiring complete per-block customization.
2Quantity of substance
If storage density increases and feature size shrinks, then storage capacity improves, but cells become more susceptible to disturbances and errors
Solution Approach 1:
The patent applies preliminary anti-action by proactively identifying blocks with abnormal retention characteristics through measurement and classification before errors occur. Configuration parameters are adjusted in advance for these blocks to compensate for their susceptibility to disturbances, preventing errors rather than correcting them after they happen.
Solution Approach 2:
The patent implements feedback by continuously measuring retention times of storage blocks and using this information to classify blocks and adjust their configuration parameters. This closed-loop approach ensures that blocks susceptible to disturbances due to high density are identified and compensated, maintaining reliability despite increased storage density.
3Duration of action of stationary object
If per-block configuration parameter management is implemented, then data retention improves, but computational overhead increases
Solution Approach 1:
The patent applies segmentation by dividing blocks into different classes based on their retention characteristics. Instead of managing configuration parameters for every individual block, the system segments blocks into groups (e.g., normal retention blocks and abnormal retention blocks) and applies parameter management strategies appropriate to each segment, reducing computational overhead while maintaining data retention.
Solution Approach 2:
The patent uses partial action by applying detailed per-block parameter management only to blocks that exhibit abnormal retention characteristics, while using more general management approaches for blocks with normal characteristics. This selective approach maintains data retention for problematic blocks without incurring the full computational overhead of universal per-block management.
Data Source
AI summary
Apparatuses, systems, and methods are disclosed for managing configuration parameters for non-volatile data storage. A control module is configured to limit erase dwell times for blocks of a non-volatile memory medium to satisfy a threshold. A block classification module is configured to group blocks of a non-volatile memory medium based on retention times for the blocks. A block access module is configured to access at least one group of blocks using a read voltage threshold selected based on a grouping.