Non-Volatile Memory Defect Detection via Program Loop Frequency Analysis
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Solution Overview
Problem
Existing methods for testing and managing non-volatile memory devices, such as flash memory devices, lack effective means to determine defective memory areas, which can lead to data storage issues and reduced device performance due to variations in manufacturing processes and program loop frequencies.
Innovation Solution
A method involving selecting a maximum program loop frequency and calculating a characteristic value based on this frequency and a sum of program loop frequencies across multiple word lines, compared to a reference value to determine if a memory area is defective, with the ability to adjust parameters based on control signals and identify high program loop frequencies indicative of defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional testing methods are used without considering program loop frequency variations, then testing simplicity is maintained, but measurement precision of defective area identification deteriorates
Solution Approach 1:
The patent applies parameter changes by introducing program loop frequency as a key parameter for testing. Instead of using traditional uniform testing methods, the patent measures and compares program loop frequencies across different word lines to identify defective memory areas. This parameter-based approach improves measurement precision without requiring complex additional hardware, only modifying the testing methodology.
Solution Approach 2:
The patent replaces physical inspection or complex diagnostic systems with an electrical measurement system that monitors program loop frequencies. By substituting traditional testing mechanisms with frequency-based electrical measurements, the patent achieves higher precision in defective area identification while maintaining relatively simple implementation through standard memory operations.
2Measurement precision
If program loop frequency measurement is implemented for each word line, then defective area identification accuracy is improved, but testing time increases
Solution Approach 1:
The patent applies partial action by measuring program loop frequencies selectively rather than exhaustively testing every possible parameter combination. It focuses specifically on frequency measurements across word lines during normal programming operations, avoiding unnecessary additional testing steps. This approach achieves sufficient detection accuracy without proportionally increasing testing time.
Solution Approach 2:
The patent enables continuous monitoring of program loop frequencies during regular memory programming operations. Rather than performing separate dedicated tests, the frequency measurements are integrated into the normal programming workflow, allowing defective area identification to occur continuously without interrupting or significantly extending the useful programming time.
3Reliability
If program loop frequency variations are considered in testing, then manufacturing variation influence is reduced, but device complexity increases
Solution Approach 1:
The patent addresses manufacturing variations by introducing program loop frequency as a compensating parameter. Different memory areas naturally exhibit different programming speeds due to manufacturing variations, and the patent captures these differences through frequency measurements. This allows the system to distinguish between normal manufacturing variations and actual defects, improving reliability without adding physical complexity to the memory device itself.
Data Source
AI summary
A method of testing a non-volatile memory device and a method of managing the non-volatile memory device are provided. The method of testing the non-volatile memory device includes calculating first and second values based on program loop frequencies corresponding to word lines of a memory area. A characteristic value of the memory area may be calculated based on the first and second values, and may be compared to a reference value to determine whether the memory area is defective.