Non-Volatile Memory Endurance Improvement via Dynamic Voltage Control
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Solution Overview
Problem
Non-volatile memory cells, particularly EEPROM cells, exhibit low read endurance due to increased threshold voltage and current flow, leading to decreased read speed and efficiency over time.
Innovation Solution
An integrated circuit card with an endurance improving circuit that monitors non-volatile memory cells and adjusts either the write voltage or read voltage based on detected characteristics, using a voltage generation circuit and a voltage control circuit to maintain or increase these voltages, thereby enhancing read endurance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of updates to EEPROM cell increases, then data storage capacity is improved, but read speed decreases and read endurance deteriorates
Solution Approach 1:
The patent applies dynamics by making the read voltage adjustable rather than fixed. The voltage control circuit dynamically changes the read voltage level based on the threshold voltage of the EEPROM cell, which varies with the number of updates. This allows the system to maintain optimal read performance across different usage states, resolving the contradiction between data storage capacity and read speed.
Solution Approach 2:
The patent changes the voltage parameter (read voltage) to compensate for threshold voltage shifts in EEPROM cells. By adjusting the read voltage parameter based on the cell's state (number of updates), the system maintains consistent read speed and endurance while allowing increased data storage capacity through repeated updates.
2Stability of the object's composition
If the threshold voltage of EEPROM cell increases, then data retention is improved, but current flow decreases and read endurance deteriorates
Solution Approach 1:
The patent implements feedback by using the threshold voltage detection to control the read voltage. The voltage control circuit detects the threshold voltage and uses this information to adjust the read voltage accordingly. This feedback mechanism ensures that the read operation remains reliable despite threshold voltage changes, maintaining read endurance while preserving data retention.
Solution Approach 2:
The patent changes the read voltage parameter in response to threshold voltage changes. By monitoring threshold voltage and adjusting read voltage accordingly, the system maintains optimal read conditions even as the cell undergoes repeated updates, thereby improving read endurance without compromising data retention.
3Speed
If the current flowing in EEPROM cell increases, then read speed is improved, but write endurance deteriorates
Solution Approach 1:
The patent changes the read voltage parameter to optimize current flow. By adjusting the read voltage based on the EEPROM cell's state, the system achieves sufficient current flow for fast reading without excessive current that would damage the cell. This parameter adjustment balances read speed with write endurance protection.
Data Source
AI summary
An apparatus for improving write/read endurance of non-volatile memory includes a non-volatile memory area including a plurality of non-volatile memory cells to store data, and an endurance improving circuit detecting a degradation characteristic of the non-volatile memory cells upon the integrated circuit card being reset and initialized. The apparatus increases at least one of a write voltage used to write first data to the non-volatile memory cells and a read voltage used to read second data from the non-volatile memory cells based on a detection result. A method for improving write/read endurance of non-volatile memory includes monitoring the characteristic of non-volatile memory cells upon an integrated circuit card being reset and initialized, and increasing at least one among a write voltage and a read voltage which are applied to the non-volatile memory cells based on a monitoring result.