Non-volatile Memory Error Correction Code Selection
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Solution Overview
Problem
Non-volatile memory systems face challenges in ensuring data integrity and reliability over time, particularly in maintaining atomicity during transactions, where error correction mechanisms need to prevent intermediate states of data storage.
Innovation Solution
A method and system for managing non-volatile memory that selects an error detection and correction code based on the type of information being written, allowing for high or low integrity levels, enabling efficient error correction and improved reliability by associating the information with the selected code during the writing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single error correction code is used for all data types, then the system is simple to implement, but data reliability and security cannot be optimized for different information types
Solution Approach 1:
The patent segments the error correction mechanism by implementing multiple error correction codes (first EDC and second EDC) with different strength levels. The system divides data into different types (sensitive vs. non-sensitive) and applies appropriate EDC levels accordingly, rather than using a uniform approach. This segmentation allows optimization of reliability for critical data while maintaining simplicity for less critical data.
Solution Approach 2:
The patent applies local quality by making the error correction capability vary according to the specific data being stored. Sensitive data receives stronger error correction (first EDC) while non-sensitive data uses weaker correction (second EDC). This localized adaptation of correction strength to data-specific requirements optimizes overall system reliability without uniformly increasing complexity across all operations.
2Reliability
If strong error correction is applied to all data, then data security and atomicity are improved, but storage efficiency and writing speed decrease
Solution Approach 1:
The patent implements partial action by applying strong error correction (first EDC) only to sensitive data that requires high atomicity guarantees, while using weaker correction (second EDC) for non-sensitive data. This selective application ensures that writing speed is maintained for data types that don't require maximum reliability, while still providing enhanced protection where needed.
3Ease of operation
If error correction codes are selected automatically by the system, then ease of operation is improved, but device complexity increases
Solution Approach 1:
The patent implements self-service by enabling the memory controller to automatically determine the sensitivity level of data being written and select the appropriate error correction code without requiring manual configuration or user intervention. The system autonomously classifies data and applies the correct EDC level, making the enhanced reliability features transparent to users while maintaining operational simplicity.
Data Source
AI summary
A method of managing a non-volatile memory includes during a data writing process, selecting, by a program triggering the data writing process, an error detection and correction code from among two codes depending on a type of information being written. The information is written into the non-volatile memory, where the information is associated with the selected error detection and correction code.