Non-Volatile Memory Program Voltage Adjustment via On-Cell Counting
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Solution Overview
Problem
Existing non-volatile memory devices face challenges in reducing total program time while maintaining efficiency and minimizing power consumption during programming operations.
Innovation Solution
A method and device for performing program loops on non-volatile memory, involving a first program loop that includes applying a program voltage to a selected word line, verifying the program state by sensing a voltage corresponding to the output, and adjusting the program voltage for subsequent loops based on verification results.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional verification methods are used without counting on-cells, then the program operation is simpler, but the program time cannot be effectively reduced
Solution Approach 1:
The patent implements feedback by counting the number of on-cells during verification and using this count information to dynamically adjust the program voltage for subsequent program loops. The control logic circuitry counts on-cells based on sensing values and feeds this information back to determine the next program voltage, creating a closed-loop control system that optimizes programming efficiency.
Solution Approach 2:
The patent changes the program voltage parameter dynamically based on the counted on-cell numbers. Instead of using a fixed program voltage, the system adjusts the voltage level according to the verification results from previous loops, optimizing the programming process by adapting voltage parameters to the actual state of memory cells.
2Productivity
If multiple program loops with voltage adjustments are implemented, then program efficiency improves, but the control process becomes more complex
Solution Approach 1:
The patent introduces dynamics into the control process by making the program voltage adjustable across multiple loops rather than fixed. The control logic circuitry dynamically determines program voltages based on real-time verification data from each loop, allowing the system to adapt its behavior to the actual programming progress and cell states.
Solution Approach 2:
The patent segments the programming process into multiple discrete loops, each with its own verification and voltage determination step. This segmentation allows the complex programming task to be broken down into manageable iterations, where each loop focuses on specific verification and adjustment activities.
3Measurement precision
If verification operations are performed frequently, then program state accuracy improves, but power consumption increases
Solution Approach 1:
The patent applies partial verification by counting only the necessary on-cells to determine whether the program state is achieved, rather than performing exhaustive verification on all memory cells. The verification process focuses on obtaining sufficient information (on-cell count) to make informed decisions about continuing or stopping programming, avoiding unnecessary energy expenditure.
Data Source
AI summary
Provided are a non-volatile memory device, a storage device including the same, and a method of performing a programming operation on the same. The method includes performing a program operation including applying a desired first program voltage to a selected word line of the memory device, the selected word line including a plurality of memory cells, performing a verification operation including sensing a first sensing value corresponding to an output of the selected word line based on a first verify voltage, and counting a number of on-cells of the selected word line based on the first sensing value to determine a first count value, determining whether a first program state of the selected word line has been verified based on the first count value and at least one reference value, and setting a second program voltage based on results of the determining whether the first program state has been verified.