Non-Volatile Memory Cells for Physically Unclonable Function Generation
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Solution Overview
Problem
Conventional PUF implementations require dedicated hardware, leading to wasted area on chips that do not need a PUF, and existing solutions face high error probabilities in key recovery due to environmental variations.
Innovation Solution
An electronic device utilizing non-volatile memory with a memory controller and evaluator to generate a PUF response by applying control signals to memory cells, causing them to maintain different states based on physical properties, and using sense amplifiers to read out these states, thereby reducing the need for specialized hardware and minimizing error probabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dedicated PUF hardware is implemented on every chip, then low bit error probabilities are achieved, but chip area is wasted on chips that do not need a PUF
Solution Approach 1:
The patent applies universality by enabling general-purpose memory cells and sense amplifiers to serve dual functions: normal memory operation and PUF key generation. The memory controller selectively configures existing hardware components to operate in PUF mode, eliminating the need for dedicated PUF hardware while maintaining low bit error probabilities through controlled read operations and error correction mechanisms.
2Area of stationary object
If general purpose hardware is used for generating PUF response, then chip area is reduced, but error probability increases
Solution Approach 1:
The patent applies parameter changes by carefully controlling read operation parameters (voltages, currents, timing) to optimize the extraction of physical variations from memory cells. The memory controller adjusts read conditions to enhance sensitivity to manufacturing variations while maintaining signal integrity, and employs error correction codes to compensate for increased error probability in general-purpose hardware.
3Reliability
If dedicated PUF hardware is implemented, then low error probability is achieved, but device complexity increases
Solution Approach 1:
The patent reduces device complexity by making existing memory components multi-functional. The same memory cells and sense amplifiers used for data storage are configured to generate PUF responses, eliminating the need for separate dedicated PUF hardware circuits. The memory controller manages both memory operations and PUF key generation through unified control logic.
Data Source
AI summary
An electronic device includes a non-volatile memory having a plurality of memory cells, a memory controller, and an evaluator. The memory controller is configured to provide control signals to the non-volatile memory causing the non-volatile memory, or a selected memory section of the non-volatile memory, to be in one of a read state and a weak erase state, wherein the weak erase state causes the plurality of memory cells to maintain different states depending on different physical properties of the plurality of memory cells. The evaluator is configured to read out the plurality of memory cells and to provide a readout pattern during the read state, wherein the readout pattern that is provided after a preceding weak erase state corresponds to a physically unclonable function (PUF) response of the electronic device uniquely identifying the electronic device.