Non-Volatile Memory Read Parameter Adjustment
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Solution Overview
Problem
Non-volatile memory devices face challenges in reliably reading and recalling configuration information at power-up, requiring additional silicon real estate and complex testing procedures, and existing methods like nvSRAM and off-chip memory have limitations in ensuring accurate data retrieval.
Innovation Solution
A method involving a sensing parameter set to initial, secondary, and tertiary values to correctly read data from non-volatile memory devices, using a controller device to iteratively adjust the sensing parameter based on checksum verification to ensure accurate data retrieval, optimizing settings for future reads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If non-volatile memory latches (NVLs) are used to store configuration information at power-up, then data retention capability is improved, but silicon area consumption increases and device complexity increases
Solution Approach 1:
The patent merges the configuration storage function into the existing non-volatile memory array structure, eliminating the need for separate NVL circuits. The same NVM cells used for general storage also serve as configuration memory, reducing silicon area while maintaining data retention capability through the inherent non-volatility of the memory cells.
Solution Approach 2:
The non-volatile memory array is designed to serve multiple functions: general data storage and configuration information storage. By making the memory array universal, the patent eliminates dedicated NVL hardware, reducing device complexity and silicon area while preserving the ability to retain configuration data at power-up.
2Reliability
If non-volatile memory latches (NVLs) are used to store configuration information, then data retention capability is improved, but device complexity and testing difficulty increase
Solution Approach 1:
By combining configuration storage with the main memory array, the patent eliminates separate NVL testing requirements. The same readout circuitry and test procedures used for general memory testing can be applied to verify configuration data, simplifying the testing process while maintaining data retention reliability.
3Ease of operation
If nvSRAM is used to remember parameters at power-up, then data retrieval capability is improved, but device complexity and silicon area increase
Solution Approach 1:
The patent merges the fast data retrieval capability needed for power-up operations with the existing non-volatile memory array. By accessing configuration data through the same array structure used for general storage, the system achieves efficient data retrieval without requiring separate fast-memory components like nvSRAM, thereby reducing device complexity.
4Quantity of substance
If off-chip memory is used to store configuration parameters, then storage capacity is improved, but access time and system complexity increase
Solution Approach 1:
The patent keeps the configuration storage on-chip within the non-volatile memory array, eliminating the need for off-chip memory access. This maintains fast access times by keeping data within the same chip structure while providing sufficient storage capacity through the array's ability to store multiple configuration parameters simultaneously.
Data Source
AI summary
A system and method to enable reading from non-volatile memory (NVM) devices is described. In one embodiment, the method includes setting a sensing parameter used to read data stored in a NVM device, reading from pluralities of locations of the NVM device with the sensing parameter set at the first value. The locations of the NVM device store an identical value. The method also includes verifying whether the identical value is read correctly from the locations of the NVM device. The method also includes setting the sensing parameter to a second value when the identical value is not read correctly with the sensing parameter set at the first value. The method further includes determining a third value for the sensing parameter from the identical value and setting the sensing parameter to the third value when the identical value is read correctly.