Non-Volatile Memory Read Operations Using Same Voltage
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Solution Overview
Problem
Non-volatile memory devices face challenges in accurately reading data due to statistical noise, which can cause errors in determining the programmed state of memory cells, especially when using single read operations or soft read operations that change with different reading voltages.
Innovation Solution
Performing multiple read operations at the same reading voltage on a storage element to determine a reliable output value, with the option to apply a voltage pulse to release trapped electrons and account for statistical noise, thereby improving data reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple read operations are performed using different reading voltages (soft read operations), then measurement precision is improved, but loss of time increases
Solution Approach 1:
The patent applies parameter changes by varying the reading voltage across multiple read operations. Different reading voltages are used to detect the programmed state of memory cells, and the results are combined to determine the final state. This approach improves measurement precision by accounting for statistical noise that may affect individual reads, while the systematic variation of voltage parameters allows for efficient error correction without excessive time penalty.
2Loss of time
If a single read operation is used to determine the programmed state, then loss of time is reduced, but measurement precision deteriorates due to statistical noise
Solution Approach 1:
The patent employs copying by performing multiple read operations on the same memory cell and combining the results. Each read operation creates a copy of the data state, and these copies are aggregated to determine the final programmed state. This approach mitigates the impact of statistical noise in any single read operation while maintaining relatively fast access times, as the multiple reads are performed in quick succession.
3Reliability
If multiple read operations are performed with different reading voltages, then reliability of data reading is improved, but device complexity increases
Solution Approach 1:
The patent applies dynamics by making the read procedure adaptive based on detected errors. The system dynamically adjusts the number and voltage levels of subsequent read operations depending on the results of initial reads. This dynamic approach improves reliability by performing additional reads only when necessary, while avoiding the fixed complexity of always performing the maximum number of reads with multiple voltage levels.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances data reliability by considering statistical noise and reducing the time required for read operations, as multiple read operations with the same voltage can compensate for noise effects and provide a more accurate determination of the stored voltage state.
Implementation Method 1
a voltage pulse may be applied to one or more word-lines of the memory prior to performing the multiple read operations. The voltage pulse may have a voltage value that is greater than the reading voltage used for the multiple read operations. The voltage pulse may result in a release of electrons that are trapped in oxide layers of one or more storage elements and that contribute to noise effects experienced at the storage element to be read.
Data Source
AI summary
Systems and methods are described for reading a storage element of a memory. In a particular embodiment, a method, in a data storage device including a controller and a non-volatile memory, where the non-volatile memory includes a plurality of storage elements, includes performing multiple read operations at a storage element of the non-volatile memory. Each read operation of the multiple read operations is performed using the same reading voltage. The method further includes determining a read value of the storage element based on the multiple read operations.