Non-Volatile Memory Sector Condition Identification
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Solution Overview
Problem
Non-volatile memory (NVM) systems face challenges in fast writing operations, particularly in emergency data storage scenarios, due to the lengthy duration of typical writing phases which can lead to inefficiencies and system malfunctions.
Innovation Solution
A method for determining the condition of a sector in a non-volatile memory by comparing the number of memory cells in programmed and erased states, allowing for identification of sector conditions such as written, non-written, soft-programmed, or erased states, enabling faster and more reliable data storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a typical writing operation with three distinct phases is used, then the memory cells are brought into the correct states with uniform ageing, but the total duration of the writing operation becomes excessively long
Solution Approach 1:
The patent applies preliminary action by performing a preliminary read operation before the writing operation to identify the initial state of memory cells. Based on this preliminary information, the system optimizes the writing sequence to skip unnecessary phases, thereby reducing total writing duration while maintaining reliable data storage and uniform ageing characteristics.
Solution Approach 2:
The patent implements dynamics by making the writing operation adaptive rather than static. The writing sequence is dynamically adjusted based on the preliminary read results, allowing the system to transition between different writing modes (full three-phase, simplified two-phase, or single-phase) depending on the actual state of memory cells, thus optimizing both speed and reliability.
2Productivity
If the writing operation duration is excessive, then partial writing or system malfunctions may occur, but reducing the writing duration may compromise the reliability of data storage
Solution Approach 1:
The patent employs feedback by using the results of the preliminary read operation to inform and adjust the subsequent writing operation. This feedback mechanism allows the system to make informed decisions about the optimal writing sequence, ensuring that writing is neither too long (causing partial writing issues) nor too short (compromising reliability), thus achieving both high productivity and data storage reliability.
Solution Approach 2:
By performing a preliminary read action before writing, the system gains advance knowledge of the memory cell states, enabling it to optimize the writing process beforehand. This preliminary action prevents both excessive writing duration and reliability issues by allowing the system to tailor the writing sequence to the actual initial conditions.
3Device complexity
If operations are performed by acting simultaneously on a plurality of memory cells, then the control system complexity is reduced, but the ability to identify specific sector conditions is diminished
Solution Approach 1:
The patent applies segmentation by dividing the memory array into distinct sectors and performing operations on a sector-by-sector basis rather than treating all memory cells uniformly. This segmentation enables the control system to track and identify the specific condition of each sector (erased, partially programmed, fully programmed) while still maintaining relatively simple control logic through standardized sector-level operations.
Data Source
AI summary
A non-volatile memory of a complementary type includes sectors of memory cells, with each cell formed by a direct memory cell and a complementary memory cell. Each sector is in a non-written condition when the corresponding memory cells are in equal states and is in a written condition wherein each location thereof stores a first logic value or a second logic value when the memory cells of the location are in a first combination of different states or in a second combination of different states, respectively. A sector is selected and a determination is made as to a number of memory cells in the programmed state and a number of memory cells in the erased state. From this information, the condition of the selected sector is identified from a comparison between the number of memory cells in the programmed state and the number of memory cells in the erased state.