Non-Volatile Memory Secure Erase via Pre-Erase Programming

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Solution Overview

Problem

Existing non-volatile memory systems, such as flash memory, face challenges in efficiently and securely erasing data, often requiring lengthy operations that may leave remnant data recoverable.

Innovation Solution

A method and system for fast bulk secure erasing in non-volatile memory devices, involving a pre-erase programming operation where charge is applied to memory cells to ensure they exceed a pre-erase threshold, followed by an erase operation that removes charge below an erase threshold, ensuring secure data deletion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional erase operations are used on non-volatile memory, then the erase process can be completed, but the operation takes a lengthy duration and may leave remnant data recoverable

Engineering Contradiction:
Improvedata securityVSAvoiderase operation duration
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent applies a pre-erase programming operation before the actual erase operation. This preliminary action programs memory cells to a known state (above a pre-erase threshold) before erasing, which prepares the cells for faster and more secure erasure. The pre-erase programming ensures that all cells are in a consistent state before the erase operation begins, enabling the subsequent erase to be both faster and more secure.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If multiple erase operations are performed to ensure secure erasure, then data recovery is prevented, but the total erase time increases significantly

Engineering Contradiction:
Improvedata securityVSAvoiderase operation efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

By performing pre-erase programming before the erase operation, the patent prepares all memory cells in advance to a known state. This eliminates the need for multiple sequential erase operations, as the pre-programmed cells can be erased in a single efficient operation while still achieving secure erasure. The preliminary action ensures consistency and readiness, improving overall efficiency.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the threshold parameters for programming and erasing. By programming cells to exceed a pre-erase threshold and then erasing to below an erase threshold, the patent creates a clear parameter separation that enables faster, more secure erasure. This parameter change approach allows for a single efficient operation rather than multiple iterations.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables rapid and secure erasure of data, preventing recovery of erased information by ensuring all memory cells are programmed above a pre-erase threshold and then erased below a secure threshold, thus enhancing data security and efficiency.

Implementation Method 1

charge sufficient to enable secure erase is applied to non-volatile memory cells in the device, using a pre-erase programming operation. Thereafter, charge is removed from the non-volatile memory to securely erase the non-volatile memory

Methodology Applied
Scientific EffectCharge injection and removal in non-volatile memory cells: Electrical Accumulator

Data Source

PatentUS9779823B2Secure erase of non-volatile memory
Publication Date: 2017.10.03 SANDISK TECHNOLOGIES LLC
  • US9779823B2 patent drawing
  • US9779823B2 patent drawing
  • US9779823B2 patent drawing

AI summary

In a non-volatile memory system, a fast bulk secure erase method for erasing data includes, in response to a secure erase command: applying charge to a portion of non-volatile memory in the non-volatile memory system, and performing an erase operation sufficient to remove charge from the portion of non-volatile memory to below an erase threshold. The applied charge is sufficient to program memory cells in the portion of non-volatile memory to above a pre-erase program threshold.