Non-volatile Memory Sequential Read Voltage Recharge Elimination
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Solution Overview
Problem
Current non-volatile memory systems face challenges in achieving high performance and efficient data reading, as they require significant time and power due to the need to recharge voltages during read operations across multiple regions of memory cells.
Innovation Solution
The proposed solution involves a non-volatile memory system where each region of memory cells is connected to a separate and independently controlled selection line, allowing for data sensing without recharging the voltage applied to the selected word line, thereby reducing the time and power required for read operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If non-volatile memory performs read operations across multiple regions using conventional methods, then data can be read from different regions, but significant time and power are required due to the need to recharge voltages during read operations
Solution Approach 1:
The memory block is divided into multiple regions (first region and second region), each with its own independently controllable selection line. This segmentation allows simultaneous or sequential reading from different regions without interfering with each other's voltage states, eliminating the need to recharge word line voltages when switching between regions.
Solution Approach 2:
The selection lines are independently controllable, allowing dynamic selection of which region to read from without affecting the voltage state of word lines in other regions. This dynamic control enables continuous voltage application to selected word lines while reading from different regions sequentially or in parallel.
2Productivity
If non-volatile memory performs read operations across multiple regions using conventional methods, then data can be read from different regions, but significant power is consumed due to the need to recharge voltages during read operations
Solution Approach 1:
The memory block is divided into multiple regions (first region and second region), each with its own independently controllable selection line. This segmentation allows simultaneous or sequential reading from different regions without interfering with each other's voltage states, eliminating the need to recharge word line voltages when switching between regions.
Solution Approach 2:
The voltage applied to word lines can be maintained continuously during read operations across multiple regions. By using independent selection lines, the system avoids the intermittent voltage recharging required in conventional methods, allowing continuous useful action (reading) without energy-intensive voltage restoration cycles.
3Productivity
If non-volatile memory uses independently controlled selection lines for each region, then read operations can be performed without recharging voltages, but the device complexity increases
Solution Approach 1:
The memory block is divided into multiple regions (first region and second region), each with its own independently controllable selection line. This segmentation allows simultaneous or sequential reading from different regions without interfering with each other's voltage states, eliminating the need to recharge word line voltages when switching between regions.
Data Source
AI summary
A non-volatile memory comprises a plurality of non-volatile memory cells positioned in different regions of a block of non-volatile memory cells. Each region is connected to a different separate and independently controlled selection line so that each of the regions can be selected (e.g., one at a time) for a memory operation. To perform a read operation, the memory system is configured to apply a voltage to a selected word line and sequentially sense data from non-volatile memory cells positioned in the different regions without recharging the voltage applied to the selected word line.