Non-Volatile Memory Wafer Testing Bypass Masking

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Solution Overview

Problem

The existing methods for testing non-volatile memory devices on a wafer are inefficient due to the need for a masking step when a failed bit line is detected, which prolongs the testing time as every memory cell needs to be erased and verified multiple times.

Innovation Solution

A method that omits the masking step for failed bit lines during testing, performing an erase operation and verify operations using different voltages, allowing for a soft program and verify operation to be conducted without interrupting the testing process, thereby reducing the overall testing time.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a masking step is performed for failed bit lines during testing, then the reliability of memory cell testing is improved, but the testing time is prolonged

Engineering Contradiction:
Improvememory cell testing reliabilityVSAvoidtesting time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent extracts and separates the testing process into two independent paths: one for successful bit lines that proceeds normally through masking and verification, and another for failed bit lines that bypasses the masking step entirely. This extraction allows the testing process to continue efficiently without being blocked by failures in individual bit lines, thereby reducing overall testing time while maintaining reliability through selective processing.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The testing methodology employs dynamic adaptability by adjusting the testing sequence based on real-time detection of failed bit lines. When a failure is detected, the system dynamically switches from the standard masked verification path to an unmasked direct verification path, allowing the testing process to flow continuously without rigid adherence to a fixed sequence, thus minimizing time loss.

Inventive Principle:
Principle #15Dynamics

2Manufacturing precision

If every memory cell is erased and verified multiple times, then the manufacturing precision is improved, but the productivity is reduced

Engineering Contradiction:
Improvememory cell threshold voltage precisionVSAvoidtesting throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent applies local quality by differentiating the verification process based on the specific conditions of each bit line. For bit lines that pass initial testing, the standard multi-step erase and verify process with masking is applied to ensure high precision. For bit lines that fail initial testing, a simplified unmasked verification process is applied, recognizing that these bit lines require different handling and would not benefit from the full precision protocol, thus maintaining overall productivity.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The methodology implements partial action by applying the full erase-verify-masking sequence only where necessary (for successful bit lines), while using a reduced verification approach for failed bit lines. This partial application of the complete precision process to only those bit lines that need it maximizes both manufacturing precision for critical cells and productivity overall by avoiding redundant operations on failed cells.

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS7697341B2Method of testing a non-volatile memory device
Publication Date: 2010.04.13 SK HYNIX INC
  • US7697341B2 patent drawing
  • US7697341B2 patent drawing
  • US7697341B2 patent drawing

AI summary

A method of testing a non-volatile memory device on a wafer is disclosed. The method includes performing an erase operation and a first verify operation about every memory cell in the non-volatile memory device, storing data of a first latch in a page buffer for storing result in accordance with the first verify operation in a second latch, and setting the data of the first latch to data indicating pass of the verifying, and performing a soft program and a second verify operation about every memory cell.