Non-volatile Memory Word Line Sensing Voltage Control
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Solution Overview
Problem
Non-volatile memory devices face challenges in reducing word line setup time and improving sensing performance due to increased integration density, which leads to longer sensing operations and reduced performance.
Innovation Solution
A method and device that control the voltage applied to a selected word line in three stages: a first section for noise inhibition, a second section for overdrive, and a third section for target voltage application, with voltage levels and durations adjusted based on the target voltage level to reduce loading time and enhance sensing performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If integration density of memory devices is increased, then capacity is improved, but sensing operation time becomes longer and performance deteriorates
Solution Approach 1:
The sensing operation is divided into three distinct time sections: a first section for noise inhibition, a second section for overdrive, and a third section for target voltage application. This segmentation allows each phase to be optimized independently, reducing the total sensing time while maintaining accuracy despite increased integration density.
Solution Approach 2:
The word line voltage is dynamically adjusted through three different voltage levels applied at different time sections. The voltage transitions from a first voltage level (noise inhibition) to a second voltage level (overdrive) to a third voltage level (target voltage), creating a time-dependent dynamic voltage profile that optimizes sensing performance and reduces operation time.
2Quantity of substance
If integration density is increased, then capacity is improved, but word line setup time increases and performance deteriorates
Solution Approach 1:
Before applying the target voltage to the word line, the method first applies a preliminary voltage level during the first time section to inhibit noise and prepare the system. This preliminary action reduces interference and stabilizes the word line, enabling faster setup times even as integration density increases.
Solution Approach 2:
The word line voltage application follows a periodic pattern with three distinct phases: noise inhibition phase, overdrive phase, and target voltage phase. This periodic structure ensures that each voltage transition is properly timed and controlled, reducing setup time while maintaining reliability in high-density configurations.
3Measurement precision
If sensing operation time is extended, then measurement precision is improved, but productivity deteriorates
Solution Approach 1:
The method changes multiple voltage parameters across different time sections: applying a first voltage level for noise inhibition, a second voltage level for overdrive, and a third voltage level for target voltage. These parameter changes enable precise control of the sensing process, achieving high measurement precision without requiring extended operation times, thus maintaining productivity.
Data Source
AI summary
A method of operating a non-volatile memory device includes performing a first sensing operation on the non-volatile memory device during a first sensing time including a first section, a second section, and a third section. The performing of the first sensing operation includes applying a first voltage level, which is variable according to a first target voltage level, to a selected word line in the first section, applying a second voltage level, which is different from the first voltage level, to the selected word line in the second section, and applying the first target voltage level, which is different from the second voltage level, to the selected word line in the third section. The first voltage level becomes greater as the first target voltage level becomes greater.