Non-volatile Memory Word Line Voltage Control for Sensing Speed
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Solution Overview
Problem
Non-volatile memory devices face challenges in reducing word line setup time and improving sensing performance due to increased integration density, which leads to longer loading times and reduced sensing performance.
Innovation Solution
A method and device that control the voltage applied to a selected word line in three stages: a first section for noise inhibition, a second section for overdrive, and a third section for applying the target voltage, with the voltage levels and durations adjusted based on the target voltage level to minimize loading time and enhance sensing performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If integration density is increased, then memory capacity is improved, but word line loading time increases
Solution Approach 1:
The sensing time is divided into three distinct sections: a first section where a first voltage level is applied to the selected word line, a second section where a second voltage level (different from the first) is applied, and a third section where a target voltage level is applied. This segmentation allows the word line voltage to be adjusted in stages, reducing the overall loading time while maintaining the increased integration density.
Solution Approach 2:
The voltage levels applied to the selected word line are made dynamic and adjustable. The first voltage level becomes greater as the target voltage level becomes greater, and the duration of the first section becomes longer as the target voltage level becomes greater. This dynamic adjustment optimizes the word line loading process for different operating conditions, reducing loading time while maintaining high integration density.
2Quantity of substance
If integration density is increased, then memory capacity is improved, but sensing performance deteriorates
Solution Approach 1:
The sensing operation is divided into three sections with different voltage levels applied to the selected word line. This segmentation allows for optimized sensing performance at each stage: the first section establishes initial conditions, the second section transitions to the target voltage, and the third section maintains the target voltage for accurate sensing. This resolves the contradiction by maintaining reliable sensing performance despite increased integration density.
Solution Approach 2:
The voltage levels and durations of the three sensing sections are dynamically adjusted based on the target voltage level. As the target voltage level increases, the first voltage level increases and the duration of the first section increases. This parameter adjustment ensures that sensing performance is maintained or improved even as integration density increases, counteracting the deteriorating effect.
Data Source
AI summary
A method of operating a non-volatile memory device includes performing a first sensing operation on the non-volatile memory device during a first sensing time including a first section, a second section, and a third section. The performing of the first sensing operation includes applying a first voltage level, which is variable according to a first target voltage level, to a selected word line in the first section, applying a second voltage level, which is different from the first voltage level, to the selected word line in the second section, and applying the first target voltage level, which is different from the second voltage level, to the selected word line in the third section. The first voltage level becomes greater as the first target voltage level becomes greater.