NVM Memory Structure Integrating XNOR Logic for AI
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Solution Overview
Problem
Traditional non-volatile memory (NVM) technologies require separate digital circuits for XNOR operations, leading to increased integrated circuit area consumption and complexity in AI applications.
Innovation Solution
Integration of an XNOR circuit with a sense amplifier within the NVM memory structure, allowing for XNOR operations to be performed during read operations without additional circuitry, utilizing differential NVM cells and various transistor configurations to simplify circuitry and reduce area consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If separate digital circuits are used for XNOR operations with traditional NVM, then logic operations can be performed, but integrated circuit area consumption increases
Solution Approach 1:
The patent merges the NVM storage cell with the XNOR logic circuit into a single integrated structure. The NVM cell components (transistors, storage elements) are directly combined with XNOR gate components, allowing both storage and logic operations to occur in the same physical location, thereby eliminating the need for separate digital circuits and reducing overall integrated circuit area.
Solution Approach 2:
The NVM cell is designed to perform multiple functions: data storage and XNOR logic operations. By making the NVM cell universal, it can both retain data and execute logic operations without requiring dedicated separate circuits for each function, thus reducing the total area required on the integrated circuit.
2Ease of manufacture
If separate digital circuits are used for XNOR operations, then logic operations can be performed, but circuit complexity increases
Solution Approach 1:
By combining the NVM cell and XNOR circuit into a single integrated structure, the patent reduces the number of separate components and interconnections required. This merging simplifies the overall circuit architecture, reduces design complexity, and makes the system easier to manufacture while maintaining full logic operation capability.
Data Source
AI summary
Technologies for various memory structures for artificial intelligence (AI) applications and methods thereof are described. An XNOR circuit along with a sense amplifier may be combined with an array (or multiple arrays) of memory such as non-volatile memory (NVM) or an NVM, SRAM combination to perform an XNOR operation on the data read from the memory. Various versions may include different connections allowing simplification of circuitry or timing. In some examples, memory array may include programmable resistor/switch device combinations, or multiple columns connected to a single XNOR+SA circuit.