Non-Volatile Storage Temperature Control via Dynamic I/O Adjustment

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Solution Overview

Problem

Semiconductor-based solid state drives (SSDs) face performance degradation and reliability issues when operated outside a specific temperature range, necessitating a method to maintain maximum performance while protecting the device from heat.

Innovation Solution

A method to control the temperature of non-volatile storage devices by adjusting data I/O performance levels based on temperature thresholds, using a formula that adjusts the number of channels, data I/O ways, and write/read operation speeds, with a temperature measuring sensor and memory controller implementing these adjustments.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the SSD operates at maximum performance level, then data I/O speed is improved, but temperature increases causing reliability degradation

Engineering Contradiction:
Improvedata I/O speedVSAvoidoperational reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent implements dynamic adjustment of data I/O performance levels based on real-time temperature monitoring. The system transitions from static performance operation to dynamic control, where the memory controller adjusts channel count, data I/O ways, and operation speeds according to temperature conditions, resolving the contradiction between maintaining high performance and ensuring reliability under thermal constraints

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system changes operational parameters (number of channels, data I/O ways, write/read speeds) based on temperature thresholds. When temperature exceeds the control engagement threshold, the system modifies these parameters to reduce heat generation while maintaining acceptable performance, thus balancing reliability and productivity

Inventive Principle:
Principle #35Parameter changes

2Speed

If the SSD operates outside the specific temperature range, then performance is improved in terms of speed, but reliability and operation stability deteriorate

Engineering Contradiction:
Improvedata I/O speedVSAvoidoperation stability
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent implements a feedback control mechanism where the memory controller continuously monitors temperature via temperature measuring sensors and adjusts data I/O performance levels accordingly. This closed-loop feedback system ensures that speed improvements do not compromise reliability by automatically reducing performance when temperature thresholds are exceeded

Inventive Principle:
Principle #23Feedback

3Reliability

If the data I/O performance level is reduced to control temperature, then reliability is improved, but productivity decreases

Engineering Contradiction:
Improvethermal protectionVSAvoiddata I/O speed
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The system applies partial performance reduction only when necessary - specifically when temperature exceeds the control engagement threshold. The patent uses multiple performance levels (first, second, third data I/O performance levels) and transitions between them based on temperature conditions, applying thermal protection measures partially rather than continuously, thus maintaining productivity when safe operating conditions exist

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS10120593B2Method of controlling temperature of non-volatile storage device
Publication Date: 2018.11.06 SAMSUNG ELECTRONICS CO LTD
  • US10120593B2 patent drawing
  • US10120593B2 patent drawing
  • US10120593B2 patent drawing

AI summary

A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.