O18 Oxygen Superlattice in Semiconductor Layers for Higher Mobility
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Solution Overview
Problem
Current semiconductor devices do not fully leverage advanced semiconductor materials and processing techniques to achieve optimal performance in terms of charge carrier mobility and device efficiency.
Innovation Solution
The development of a semiconductor device incorporating a superlattice structure with oxygen monolayers, where each group of layers includes a plurality of stacked base semiconductor monolayers and at least one oxygen monolayer constrained within the crystal lattice, enhancing charge carrier mobility by reducing effective mass and providing improved energy band structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional semiconductor materials and structures are used, then manufacturing processes are simpler, but charge carrier mobility is insufficient
Solution Approach 1:
The semiconductor layer is segmented into multiple thin monolayers (e.g., 4-6 silicon monolayers) separated by interspersed layers (oxygen, carbon, or nitrogen monolayers), creating a superlattice structure. This segmentation allows each thin layer to be under tensile strain while maintaining crystal integrity, thereby enhancing charge carrier mobility through reduced effective mass and altered band structure.
Solution Approach 2:
The invention uses composite material structures where silicon monolayers are combined with interspersed layers of oxygen, carbon, or nitrogen. These composite superlattice structures create unique mechanical and electronic properties that pure silicon cannot achieve, specifically enabling tensile strain without dislocation and improved charge carrier mobility.
2Speed
If strained material layers are introduced to enhance mobility, then charge carrier mobility improves, but manufacturing precision requirements increase
Solution Approach 1:
The invention applies local quality by creating alternating regions of strained silicon monolayers and interspersed layers within the semiconductor structure. Each silicon monolayer is locally strained by the adjacent interspersed layers, providing localized tensile strain that enhances mobility without requiring the entire structure to be precisely controlled at the strain level.
Solution Approach 2:
The invention changes the physical parameters of the semiconductor structure by introducing interspersed layers that alter the lattice constant and induce tensile strain in the silicon monolayers. This parameter change (lattice expansion) improves charge carrier mobility while the thin-layer approach maintains manufacturability through standard epitaxial growth techniques.
3Speed
If impurity-free zones are created to reduce scattering, then charge carrier mobility improves, but device complexity increases
Solution Approach 1:
The invention merges multiple functions into the superlattice structure: the interspersed layers simultaneously provide tensile strain to enhance mobility, create impurity-free zones to reduce scattering, and maintain crystal structural integrity. This consolidation achieves multiple mobility-enhancing effects through a single integrated structure rather than separate components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The superlattice structure results in higher charge carrier mobility, reduced scattering effects, and enhanced device performance, with potential applications in opto-electronic devices and other semiconductor applications.
Implementation Method 1
enhancing charge carrier mobility by reducing effective mass
Implementation Method 2
providing improved energy band structures
Implementation Method 3
reduced scattering effects
Data Source
AI summary
A semiconductor device may include a semiconductor layer, and a superlattice adjacent the semiconductor layer and including stacked groups of layers. Each group of layers may include stacked base semiconductor monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one oxygen monolayer of a given group of layers may include an atomic percentage of 18O greater than 10 percent.