Oblique Fluid Supply for CMP Polishing

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Solution Overview

Problem

The existing chemical mechanical polishing (CMP) methods for semiconductor devices face challenges in reducing the flow rate of polishing and cleaning liquids without compromising process performance, leading to issues like increased polishing temperature, reduced polishing rate, and abnormal polishing due to the high cost and complexity of equipment and processes.

Innovation Solution

A polishing method involving a rotating polishing pad with a chemical fluid supplied obliquely to the substrate, allowing the fluid to hold a velocity component in the diameter direction, which reduces the flow rate of polishing and cleaning liquids while maintaining process performance by optimizing the flow velocity and angle of fluid supply.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the flow rate of polishing liquid is reduced, then cost is reduced, but polishing rate decreases and dishing increases

Engineering Contradiction:
Improveflow rate of polishing liquidVSAvoidpolishing rate
Core Design Contradiction:
Quantity of substanceVSProductivity

Solution Approach 1:

The patent changes the supply angle parameter of the polishing liquid from the conventional substantially vertical direction to an oblique direction (at a specific angle relative to the polishing pad surface). This parameter change optimizes the liquid flow distribution and velocity component in the diameter direction, enabling reduced flow rate while maintaining polishing rate and controlling dishing.

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If the flow rate of polishing liquid is reduced, then cost is reduced, but polishing temperature rises causing abnormal polishing

Engineering Contradiction:
Improveflow rate of polishing liquidVSAvoidpolishing temperature
Core Design Contradiction:
Quantity of substanceVSTemperature

Solution Approach 1:

The patent modifies the supply angle parameter of the polishing liquid to an oblique direction, which optimizes heat dissipation efficiency and liquid flow distribution. This parameter change allows reduced flow rate while maintaining stable polishing temperature and preventing abnormal polishing.

Inventive Principle:
Principle #35Parameter changes

3Quantity of substance

If the flow rate of cleaning liquid is reduced, then cost is reduced, but cleaning capability decreases and corrosion occurs

Engineering Contradiction:
Improveflow rate of cleaning liquidVSAvoidcleaning capability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent changes the supply angle parameter of the cleaning liquid from substantially vertical to an oblique direction. This parameter optimization improves liquid flow distribution and cleaning efficiency, enabling reduced flow rate while maintaining cleaning capability and preventing corrosion.

Inventive Principle:
Principle #35Parameter changes

4Productivity

If conventional CMP equipment and process are used, then polishing is performed, but equipment complexity and process complexity increase

Engineering Contradiction:
Improvepolishing performanceVSAvoidequipment complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent optimizes the polishing liquid supply angle parameter to an oblique direction, which simplifies the liquid supply mechanism design while achieving superior polishing performance. This parameter change reduces equipment complexity and process complexity compared to conventional CMP systems.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables a reduction in the flow rate of chemical fluids without deteriorating process performance, achieving faster polishing rates, reduced dishing, and stable temperatures, thus improving the efficiency and cost-effectiveness of the CMP process.

Implementation Method 1

supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad... allowing the fluid to hold a velocity component in the diameter direction

Methodology Applied
Scientific EffectFluid flow velocity component:

Implementation Method 2

polishing a surface of a substrate by using the rotating polishing pad... chemical-mechanical polishing (CMP)

Methodology Applied
Scientific EffectFriction: Friction

Implementation Method 3

abnormal polishing due to a rise in polishing temperature

Methodology Applied
Scientific EffectFrictional heating: Viscous Heating

Data Source

PatentUS8778802B2Polishing method and method for fabricating semiconductor device
Publication Date: 2014.07.15 KIOXIA CORP
  • US8778802B2 patent drawing
  • US8778802B2 patent drawing
  • US8778802B2 patent drawing

AI summary

A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.