Oblique Semiconductor Power Generation Element
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Solution Overview
Problem
Current power generation elements face inefficiencies in converting temperature differences into electrical current due to limitations in electron emission characteristics and surface area optimization.
Innovation Solution
A power generation element design featuring oblique-oriented semiconductor surfaces with alternating polar and non-polar regions, increasing the surface area and emission efficiency by creating microscopic asperities, and utilizing a reduced-pressure gap with specific semiconductor materials like AlxGa1-xN, enhances electron emission and current density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the emitter electrode surface is made flat, then the manufacturing is simple, but the electron emission surface area is reduced and emission efficiency is low
Solution Approach 1:
The emitter electrode surface is designed with curved microscopic asperities instead of a flat surface. These asperities create oblique surfaces that increase the effective electron emission area while maintaining a relatively simple macroscopic structure. The curvature principle transforms the surface geometry to optimize emission characteristics without excessive complexity.
Solution Approach 2:
The invention transitions from a two-dimensional flat surface to a three-dimensional textured surface with microscopic asperities. This dimensional change increases the surface area available for electron emission while the asperities are formed through controlled manufacturing processes that balance complexity with fabrication feasibility.
2Productivity
If the semiconductor surface is oriented perpendicular to the electrode surface, then the crystal orientation is simple, but the electron emission efficiency is reduced due to lack of oblique surfaces
Solution Approach 1:
The semiconductor crystal is oriented at an asymmetric oblique angle relative to the electrode surface normal, specifically within 5° to 45° from the parallel direction. This asymmetric orientation creates oblique emission surfaces that enhance electron emission efficiency while the angle range provides a practical balance between performance optimization and manufacturing control.
Solution Approach 2:
The invention optimizes the crystal orientation parameter by specifying a particular angular range (5°-45°) rather than a fixed perpendicular orientation. This parameter change allows the system to achieve superior electron emission characteristics while remaining within manufacturable tolerances for crystal growth and electrode fabrication.
3Force
If the gap between electrodes is reduced, then the electric field strength increases, but electron emission is suppressed due to insufficient acceleration space
Solution Approach 1:
The emitter electrode surface is engineered with localized microscopic asperities that create regions of enhanced electric field concentration at the tips and oblique surfaces of the asperities. This local quality enhancement allows for effective electron emission and acceleration within a constrained overall gap distance, as the field is intensified at specific locations rather than requiring a uniformly large gap.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases the power generation efficiency by optimizing electron emission characteristics and surface area, leading to higher current densities and improved thermal-to-electrical energy conversion.
Implementation Method 1
a power generation element including an emitter electrode to which heat is applied from a heat source, and a collector electrode capturing thermions from the emitter electrode
Data Source
AI summary
According to one embodiment, a power generation element includes a first conductive layer, a second conductive layer, and a first member. The first member is provided between the first conductive layer and the second conductive layer. The first member includes a first semiconductor having polarity. A gap is between the second conductive layer and the first member. A <000-1> direction of the first semiconductor is oblique to a first direction from the first conductive layer toward the second conductive layer.