Oblong Aperture Arrays for Multi-Beam Lithography Cut Patterns

The patent applies local quality by using oblong-shaped apertures with specific aspect ratios (e.g., 2:1 or higher) that are optimized for writing cut patterns in one-dimensional circuit designs. This localized geometric modification allows the beam to efficiently write linear features while maintaining the ability to write complex 2D patterns when needed, thus resolving the contradiction between processing speed for 1D designs and pattern complexity capability.

The patent implements universality by providing a mixed aperture array that includes both oblong-shaped apertures (for efficient 1D cut pattern writing) and conventional circular or square apertures (for complex 2D pattern writing). This multi-functional aperture array allows the same lithography tool to handle both one-dimensional circuit designs and complex two-dimensional patterns with high precision, resolving the contradiction between processing speed and pattern definition accuracy.

The patent applies local quality by introducing oblong-shaped apertures with specific aspect ratios that concentrate the beam intensity distribution in a way that achieves sub-10nm resolution for cut patterns. The oblong shape creates a more focused exposure profile along the cut direction while maintaining adequate width for precise line definition, thus achieving the required resolution for advanced semiconductor nodes while preserving pattern writing capability.

The patent applies segmentation by dividing the aperture array into multiple manageable sub-arrays or groups, where each sub-array can be independently controlled and aligned. This segmentation reduces the overall control complexity while maintaining high density and throughput, as the system can activate only the necessary sub-arrays for each specific writing task rather than managing all apertures simultaneously.