Octagonal Transistor Gate Layout for High Voltage Channel Density
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Solution Overview
Problem
Power transistors in chips face limitations in increasing the channel width within a given layout area due to high voltage stress, resulting in a constrained transistor density.
Innovation Solution
A transistor structure featuring gate structures arranged in octagonal enclosed rings, with bridge tap structures and doped regions, which increases the channel width to layout area ratio by optimizing the layout and connectivity within the transistor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the layout area is increased to accommodate power transistors that endure high voltage stress, then the voltage endurance capability is improved, but the channel width to layout area ratio decreases
Solution Approach 1:
The gate structure is divided into multiple gate segments (first gate, second gate, third gate, fourth gate) arranged in an octagonal pattern around a central region. This segmentation allows the channel to be distributed across multiple regions, increasing the total channel width within a compact layout area while maintaining the necessary spacing for high voltage endurance.
Solution Approach 2:
The invention transitions from a conventional linear or rectangular gate arrangement to a two-dimensional octagonal configuration. By arranging gates in a radial pattern around a central region, the channel width is effectively increased in multiple directions simultaneously, achieving higher channel width to layout area ratio without proportionally increasing the overall layout area.
2Productivity
If the transistor channel size is increased to improve performance, then the work effectiveness is improved, but the layout area occupied increases
Solution Approach 1:
The octagonal gate structure is arranged around a central region that contains additional functional elements. The gate segments are nested in a compact octagonal configuration, and the central region is utilized to house the second doped region and other components, effectively nesting multiple functional elements within a small footprint to maximize channel width without proportionally increasing layout area.
Solution Approach 2:
By transitioning to a radial octagonal arrangement, the channel extends in multiple directions from the center simultaneously rather than linearly. This multi-directional expansion increases the effective channel width within a compact circular/octagonal boundary, achieving higher productivity without proportional area increase.
Data Source
AI summary
A power chip and a transistor structure thereof are provided. The transistor structure includes a semiconductor substrate, a plurality of gate structures, a plurality of first doped regions and a second doped region. The gate structures are disposed on the semiconductor substrate. The first doped regions are formed respectively in a plurality of first areas surrounded by the gate structures. The second doped region is formed in a second area among the gate structures. Each of the gate structures is arranged in an enclosed ring, and the shape of each of the gate structures is octagon.