Odd-fin height cell regions for semiconductor device layout
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Solution Overview
Problem
The existing semiconductor design technologies face challenges in efficiently integrating standard cells with varying configurations and current capacities within a layout, particularly in facilitating the stacking of pan-stackable and hetero-stackable cells while maintaining design rule compliance and optimizing area usage.
Innovation Solution
The design of standard cells with specific fin patterns and gate structures allows for the creation of pan-stackable and hetero-stackable configurations, enabling efficient stacking and layout organization by designating dummy and active fins, and optimizing cell placement within a grid structure to accommodate different current capacities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If standard cells are designed with uniform dimensions to facilitate placement, then ease of manufacture is improved, but adaptability to different current capacities deteriorates
Solution Approach 1:
The standard cell is segmented into multiple fin regions (first fin region, second fin region, third fin region) with different numbers of fins, allowing each segment to provide different current capacities while maintaining the overall cell's uniform dimensions for standardized placement
Solution Approach 2:
Different regions within the standard cell are assigned different local qualities (different numbers of fins in different fin regions) to provide varying current capacities, while the overall cell maintains uniform dimensions for standardized placement
2Adaptability or versatility
If cells with different current capacities are integrated into a layout, then adaptability is improved, but device complexity deteriorates
Solution Approach 1:
A single standard cell design serves multiple functions by providing different current capacities through its different fin regions, eliminating the need for multiple different cell types and simplifying the overall layout
3Area of stationary object
If pan-stackable and hetero-stackable configurations are implemented, then area usage is optimized, but manufacturing precision requirements deteriorate
Solution Approach 1:
The standard cell employs asymmetric fin distribution with different numbers of fins in different regions (first, second, and third fin regions), enabling pan-stackable and hetero-stackable configurations that optimize area usage while maintaining design rule compliance through controlled asymmetric patterns
Data Source
AI summary
A semiconductor device includes fins extending substantially parallel to a first direction, at least one of the fins being a dummy fin; and at least one of the fins being an active fin; and at least one gate structure formed over corresponding ones of the fins and extending substantially parallel to a second direction, the second direction being substantially perpendicular to the first direction; wherein the fins and the at least one gate structure are located in a cell region which includes an odd number of fins. In an embodiment, the cell region is substantially rectangular and has first and second edges which are substantially parallel to the first direction; and neither of the first and second edges overlaps any of the fins.