Off-Center Gas Delivery Funnel for Uniform Deposition
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Solution Overview
Problem
The existing semiconductor processing chambers face challenges in achieving uniform layer deposition due to asymmetrically disposed pump ports and non-uniform distribution of process gases, leading to variations in pressure and deposition quality across the substrate surface.
Innovation Solution
A process chamber design with off-center pump ports creating localized pressure regions and a gas injection funnel offset from the central axis, positioned in a region of low pressure, ensures uniform gas distribution across the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If pump ports are disposed asymmetrically with respect to the chamber volume, then the chamber structure can be simplified and pumping efficiency is improved, but azimuthally non-uniform pumping is created proximate the substrate surface resulting in non-uniform layer deposition
Solution Approach 1:
The patent applies asymmetry by deliberately positioning the gas injection funnel off-center relative to the substrate support pedestal, specifically in the region opposite the pump port. This asymmetric configuration compensates for the asymmetric pumping created by the off-center pump port, balancing the gas distribution across the substrate surface and achieving uniform layer deposition despite the non-symmetric chamber geometry
Solution Approach 2:
The patent implements local quality by positioning the gas injection funnel specifically in the low-pressure region opposite the pump port. This localized placement ensures that gas is injected where it can effectively counterbalance the non-uniform pumping, creating optimal gas distribution characteristics in the critical deposition region while maintaining simplified overall chamber structure
2Device complexity
If process gas is supplied via a gas inlet disposed centrally above the substrate support, then the gas delivery system is simplified, but non-uniform distribution of process gas occurs across the substrate surface with thinner deposition proximate the pumping port
Solution Approach 1:
The patent resolves this contradiction by replacing the conventional central gas inlet with an asymmetrically positioned gas injection funnel located in the ceiling opposite the pump port. This asymmetric positioning compensates for the non-uniform gas distribution caused by the off-center pump port, achieving uniform gas delivery across the substrate while maintaining relatively simple system architecture
Solution Approach 2:
The gas injection funnel acts as an intermediary element that mediates between the pump port-induced pressure non-uniformity and the substrate surface. By positioning the funnel in the low-pressure region opposite the pump, it introduces process gas in a manner that balances the asymmetric pumping effects, achieving uniform deposition without complex gas distribution systems
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the uniformity of layer deposition by compensating for non-uniform pumping, resulting in improved deposition quality and consistency across the substrate.
Implementation Method 1
the pump port provides azimuthally non-uniform pumping proximate a surface of the substrate support pedestal creating localized regions of high pressure and low pressure within the inner volume
Implementation Method 2
providing process gas to the inner volume via a gas injection funnel disposed in a ceiling of the chamber body opposite the substrate support pedestal
Data Source
AI summary
Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure.