Off-Center Nozzle Layout for Uniform Substrate Etching
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Solution Overview
Problem
The existing substrate processing apparatuses face challenges in maintaining a uniform etch rate across the substrate due to concentration of dissolved oxygen at the center, leading to uneven etching, as nitrogen gas supply can cause turbulence and irregular oxygen distribution.
Innovation Solution
A substrate processing apparatus and method that includes a nozzle positioned at a predetermined distance from the substrate's center to supply treatment liquid vertically, spreading it between the center and edge, with a dissolved oxygen detection unit to adjust the nozzle's position based on oxygen levels, ensuring even distribution and preventing concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If nitrogen gas is supplied along with the chemical to improve dissolved oxygen concentration at the center, then the dissolved oxygen level at the center is improved, but turbulence is caused around the chemical surface leading to irregular distribution of dissolved oxygen
Solution Approach 1:
The patent removes nitrogen gas from the chemical supply system entirely, extracting the harmful element that causes turbulence. Instead, oxygen is supplied separately through a dedicated gas supply unit that introduces gas bubbles directly into the chemical reservoir, avoiding turbulence at the chemical surface while maintaining uniform dissolved oxygen distribution.
Solution Approach 2:
The patent introduces a separate oxygen gas supply unit as an intermediary between the chemical reservoir and the substrate. This intermediary supplies oxygen directly to the chemical without causing turbulence, mediating the oxygen transfer process to achieve uniform distribution without the harmful effects of nitrogen gas mixing.
2Quantity of substance
If nitrogen gas is blown to supply oxygen, then oxygen availability is improved, but irregular distribution of dissolved oxygen occurs causing uneven etching
Solution Approach 1:
The patent extracts nitrogen gas from the system and replaces it with a dedicated oxygen supply mechanism. The gas supply unit introduces oxygen bubbles directly into the chemical reservoir, ensuring uniform oxygen distribution without the turbulence and irregularity caused by nitrogen gas, thereby achieving uniform etching across the substrate.
Solution Approach 2:
The patent changes the gas supply parameters by using pure oxygen instead of nitrogen gas, and by controlling the gas supply rate and bubble size through the dedicated gas supply unit. This parameter change ensures uniform oxygen dissolution and distribution, leading to consistent etch rates across the entire substrate surface.
3Reliability
If chemical is continuously supplied to the center of the substrate, then cleaning effectiveness at the center is improved, but dissolved oxygen concentrates at the center causing greater etch rate change
Solution Approach 1:
The patent applies local quality by positioning the nozzle to supply chemical to a specific location on the substrate while the substrate rotates. The nozzle is positioned at a distance from the center, and the chemical is supplied in a manner that distributes it uniformly across the substrate surface through rotation, rather than continuously concentrating it at the center. This local supply approach combined with rotation achieves both effective cleaning and uniform oxygen distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maintains a consistent etch rate across the substrate by preventing dissolved oxygen concentration, resulting in uniform etching and reducing substrate unevenness.
Implementation Method 1
a dissolved oxygen detection unit connected to the liquid discharge unit, and detecting the amount of dissolved oxygen of the treatment liquid and calculating dissolved oxygen amount data
Implementation Method 2
when the treatment liquid is supplied to the substrate rotated by the support unit, the treatment liquid is not sprayed by the nozzle at a position overlapping the center of the substrate
Data Source
AI summary
Provided are a substrate processing apparatus and a substrate processing method that are capable of maintaining an etch rate of a substrate within a predetermined range by preventing the amount of dissolved oxygen from being concentrated in a specific region of the substrate when a chemical is supplied to a center of the substrate. The apparatus for processing a substrate includes: a chamber having a processing space; a support unit for supporting and rotating a substrate in the processing space; a liquid discharge unit including a nozzle for discharging a treatment liquid onto a substrate supported by the support unit in a liquid phase; and a liquid supply unit for supplying the treatment liquid to the liquid discharge unit, in which, when viewed from above, the nozzle is spaced apart from a center of the substrate such that when the treatment liquid is supplied to the substrate rotated by the support unit, the treatment liquid is not sprayed by the nozzle at a position overlapping the center of the substrate.