Offset Pillar Electrode for Semiconductor Thermal Stress

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Solution Overview

Problem

Semiconductor devices with pillar-shaped electrodes experience peeling off at the joining interface due to repetitive stress from temperature cycle tests, caused by differences in linear expansion coefficients between the wiring substrate and the semiconductor chip, leading to reliability issues.

Innovation Solution

A semiconductor device design where the pad is partially covered with a protective insulating film, and the pillar-shaped electrode is formed with a first portion on the opening region of the pad and a second portion extended over the protective insulating film, with the center position of the pillar-shaped electrode shifted from the opening region, enhancing the contact area and reducing stress concentrations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the pillar-shaped electrode is centered on the opening region of the pad, then the alignment and manufacturing process is simpler, but the joining interface experiences higher stress concentration and peeling off occurs under heat load

Engineering Contradiction:
Improvealignment simplicityVSAvoidjoining interface stability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The pillar-shaped electrode is intentionally positioned asymmetrically relative to the opening region, with its center offset from the center of the opening. This asymmetric positioning shifts the stress distribution pattern, preventing stress concentration at the bonding pad-pillar electrode interface during thermal cycling, thereby preventing peeling off while maintaining manufacturing feasibility

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The protective insulating film is selectively formed to cover specific regions including the bonding pad and surrounding areas, creating different protective qualities in different locations. This local differentiation provides enhanced protection to the joining interface region while allowing the pillar electrode to maintain electrical connection, thus improving reliability without compromising manufacturing simplicity

Inventive Principle:
Principle #3Local quality

2Reliability

If the protective insulating film covers the entire pad, then the protection against stress and environmental factors is enhanced, but the electrical connection between the pillar electrode and pad is compromised

Engineering Contradiction:
Improvejoining interface protectionVSAvoidelectrical connection accuracy
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The protective insulating film is formed with spatially varying coverage: it completely covers the bonding pad region to provide stress protection and environmental isolation, while leaving the opening region exposed to allow electrical connection. This local differentiation in protective coverage resolves the contradiction between protection and electrical connectivity

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The pad structure is segmented into functionally distinct regions: the bonding pad region covered by the protective insulating film for mechanical protection, and the opening region left exposed for electrical connection. This segmentation allows each region to fulfill its specific function without interfering with the other, achieving both protection and connection accuracy

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design improves the reliability of the semiconductor device by reducing peeling off at the joining interface and enhancing the connection strength between the pad and the pillar-shaped electrode, even under heat load conditions.

Implementation Method 1

a difference in a linear expansion coefficient between the wiring substrate and the semiconductor chip

Methodology Applied
Scientific EffectLinear expansion coefficient difference: Thermal Expansion

Data Source

PatentUS9349678B2Chip having a pillar electrode offset from the bonding pad
Publication Date: 2016.05.24 RENESAS ELECTRONICS CORP
  • US9349678B2 patent drawing
  • US9349678B2 patent drawing
  • US9349678B2 patent drawing

AI summary

The reliability of a semiconductor device is improved. A probe mark is formed on a probe region of a pad covered with a protective insulating film. And, a pillar-shaped electrode has a first portion formed on an opening region and a second portion that is extended over the probe region from the upper portion of the opening region. At this time, a center position of the opening region is shifted from a center position of the pillar-shaped electrode that is opposed to a bonding finger.