Offset Upper Reflector Layout for Uniform Wafer Heating
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Solution Overview
Problem
Existing semiconductor processing systems face challenges in achieving uniform substrate temperature control during material layer deposition, leading to variations in material layer thickness, composition, and resistivity across the substrate.
Innovation Solution
A chamber arrangement with an asymmetric upper reflector and filament-type upper linear lamps, coupled with pyrometers, is used to control substrate temperature, ensuring unequal lateral offsets and offsets between injection and exhaust edges, thereby reducing cross-substrate material layer thickness variation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a symmetric upper reflector is used in the chamber arrangement, then the structural simplicity and ease of manufacture are improved, but the cross-substrate material layer thickness uniformity deteriorates due to non-uniform substrate temperature distribution
Solution Approach 1:
The upper reflector is designed with an asymmetric configuration where the first arcuate recess is offset from the rotation axis by a first distance and the second arcuate recess is offset by a second distance, with the first distance being different from the second distance. This asymmetric design creates non-uniform reflection patterns that compensate for the natural temperature gradients in the chamber, achieving more uniform substrate temperature distribution and thereby improving material layer thickness uniformity.
2Temperature
If the upper reflector arcuate recesses are positioned closer to the rotation axis, then the heating uniformity at the substrate center is improved, but the heating uniformity at the substrate edges deteriorates
Solution Approach 1:
The reflector design implements local quality by creating different offset distances for different regions of the reflector. The first arcuate recess has a first offset distance from the rotation axis while the second arcuate recess has a second offset distance, allowing different portions of the substrate to receive optimized heating. This enables independent optimization of temperature distribution at different locations on the substrate.
3Measurement precision
If multiple temperature sensors are added to measure substrate temperature at different locations, then the temperature measurement precision is improved, but the device complexity increases
Solution Approach 1:
The asymmetric upper reflector acts as an intermediary element that passively shapes and distributes thermal radiation to achieve uniform substrate temperature. By designing the reflector geometry with specific offset distances for its arcuate recesses, the system achieves temperature uniformity through geometric optimization rather than through complex active control systems with multiple sensors and actuators.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves reduced cross-substrate material layer thickness variation and improved uniformity by precisely controlling substrate temperature, enhancing the quality of deposited material layers.
Implementation Method 1
an upper reflector supported above the chamber body and defining therein a laterally-outer first arcuate recess and a laterally-outer second arcuate recess
Implementation Method 2
coupled with pyrometers, is used to control substrate temperature
Data Source
AI summary
A chamber arrangement includes a chamber body having a chamber body with an injection end and a longitudinally opposite exhaust end, a substrate support arranged within the chamber body and supported for rotation therein rotation about a rotation axis, and an upper reflector supported above the chamber body and defining therein a laterally-outer first arcuate recess and a laterally-outer second arcuate recess. The laterally-outer first arcuate recess is separated from the rotation axis by a first arcuate recess lateral offset, the laterally outer second arcuate recess separated from the rotation axis by a second arcuate recess lateral offset, and the second arcuate recess lateral offset greater than or less than the first arcuate recess lateral offset. Semiconductor processing systems and material layer deposition methods are also described.


