Offset Ridge Semiconductor Laser for Cost-Effective Production
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Solution Overview
Problem
The high cost of high-quality growth substrates for nitride-based semiconductor lasers limits the production of cost-effective, high-quality semiconductor lasers.
Innovation Solution
A method involving a semiconductor body with a web-shaped region offset from its central axis, where the web-shaped region serves as a ridge to guide waves and is positioned in areas of lower dislocation density, allowing for increased crystal quality and longer laser lifetime, and a contact layer for external electrical contacting, enabling efficient production of multiple semiconductor bodies on a single substrate with high crystal quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-quality growth substrates are used to ensure high crystal quality, then the crystal quality and service life of semiconductor lasers are improved, but the production cost increases significantly
Solution Approach 1:
The patent applies local quality by positioning the web-shaped active region specifically in areas of the substrate with lower dislocation density. The substrate exhibits a dislocation gradient where different regions have different crystal qualities. By locally placing the active region in favorable areas (lower dislocation density zones), the patent achieves high crystal quality and long service life without requiring the entire substrate to be of high cost premium quality material.
2Productivity
If multiple semiconductor bodies are produced on a single substrate to increase productivity, then the production efficiency is improved, but the crystal quality may be compromised due to substrate inhomogeneity
Solution Approach 1:
The patent produces multiple semiconductor bodies on a single substrate by exploiting the local quality variations in the substrate. Each web-shaped active region is positioned in areas with lower dislocation density, ensuring high crystal quality for each individual device. This allows simultaneous production of multiple high-quality semiconductor bodies on one substrate without compromising crystal quality, thereby increasing productivity while maintaining manufacturing precision.
3Shape
If the web-shaped region is positioned at the center of the semiconductor body, then the structural symmetry is maintained, but the available contact area for external electrical contacting is reduced
Solution Approach 1:
The patent deliberately introduces asymmetry by positioning the web-shaped active region offset from the central axis of the semiconductor body. This asymmetric positioning creates an asymmetrical distribution of contact areas on the substrate surface. The offset positioning ensures that sufficient contact area is available on at least one side of the active region for external electrical contacting, while the other side maintains adequate structural integrity. This resolves the contradiction by prioritizing manufacturing ease (electrical contacting) over structural symmetry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces production costs while ensuring high crystal quality and extended service life of semiconductor lasers by utilizing substrates with dislocation gradients, allowing for efficient electrical contacting and increased yield without compromising crystal quality.
Implementation Method 1
The ridge-shaped area serves to guide the waves within the semiconductor body
Data Source
Figure 1A~1B
Figure 2A~2C
Figure 2D
AI summary
The invention relates to a semiconductor laser (1), which comprises a semiconductor body (2) having an active region (20) for generating radiation and a bridge-shaped region (3). According to the invention, the bridge-shaped region has a longitudinal axis (30) running along an emission direction, which is arranged offset in the transverse direction in relation to a center axis (25) running in the emission direction. The invention further relates to a method for producing a semiconductor laser.