Offset Terminal Contacts in 3D Hall Sensor Wafer Stacks
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Solution Overview
Problem
Current semiconductor sensor structures, such as three-dimensional Hall sensors, face challenges in achieving compact and sensitive magnetic field detection while maintaining reliable electrical connections and efficient manufacturing processes.
Innovation Solution
A semiconductor sensor structure comprising a first semiconductor wafer with a monolithic Hall sensor and a second wafer with an integrated circuit, where terminal contacts on both wafers are offset and arranged with rotational symmetry, allowing for an integral electrical connection without direct wafer joining, utilizing CMOS technology and trench insulation for compactness and sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through contact holes are used to join ICs over their full area, then reliable electrical connections are achieved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent divides the wafer joining process into segments: through contact holes are formed only in specific regions where electrical connections are needed, rather than across the full wafer area. This segmentation reduces the complexity of the joining structure while maintaining reliable electrical connections at the necessary locations.
Solution Approach 2:
The patent applies different structural characteristics to different regions of the wafer. Through contact holes are created locally at connection points, while other regions maintain their original wafer structure. This local application of through contact holes reduces overall device complexity while ensuring reliable electrical connections where required.
2Volume of moving object
If wafer thickness is reduced for compactness, then device size decreases, but mechanical strength and handling difficulty worsen
Solution Approach 1:
The patent performs preliminary strengthening actions on thin wafers before they are subjected to mechanical stress during handling and processing. Reinforcement structures are introduced in advance to compensate for the reduced thickness, enabling thin wafers to maintain adequate mechanical strength throughout the manufacturing process.
Solution Approach 2:
The patent employs composite structures combining thin wafer materials with reinforcement materials. This composite approach allows the wafer to achieve compact thickness while the integrated reinforcement structures provide the necessary mechanical strength for handling and processing.
3Reliability
If full area wafer joining is performed, then electrical connection coverage is maximized, but manufacturing time and process complexity increase
Solution Approach 1:
The patent segments the electrical connection areas from the non-connection areas of the wafer. Through contact holes are formed only in the segmented connection regions, reducing the total processing area and time while maintaining adequate electrical connection coverage for sensor operation.
Solution Approach 2:
The patent applies partial action by forming through contact holes only in the minimum necessary areas required for electrical connections, rather than performing full area joining. This partial processing approach reduces manufacturing time and process complexity while providing sufficient electrical connectivity for the sensor function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the creation of highly sensitive and compact isotropic Hall sensors with reliable electrical connections, facilitating efficient manufacturing and improved magnetic field detection capabilities.
Implementation Method 1
at least three pairs of electrode pairs form at least three four-contact structures that each permit the measurement of one spatial component of the magnetic field using the Hall effect
Data Source
AI summary
A semiconductor sensor structure that includes a first and a second semiconductor wafer. The second semiconductor wafer has a substrate with integrated circuit with at least one metallic terminal contact, and the first semiconductor wafer has a semiconductor layer of a second conductivity type with a three-dimensional Hall sensor structure with a sensor region and at least three first metallic terminal contacts that are spaced apart from one another are formed on a front, and at least three second metallic terminal contacts that are spaced apart from one another are formed on a back. The terminal contacts are each formed on a highly doped semiconductor contact region of a second conductivity type and are arranged at an offset from the second terminal contacts in a projection perpendicular to the front.