Ohmic Fuse Doping for Stable DRAM Resistance Readout
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Solution Overview
Problem
Dynamic Random Access Memory (DRAM) devices face challenges with misjudgment in read and write operations due to the resistance characteristics of fuses, particularly at lower operation currents, leading to higher deviations in resistance proportional to temperature.
Innovation Solution
Incorporating a resistance modification doped region within the semiconductor device, which converts the fuse to an ohmic type fuse, ensuring resistance is positively proportional to temperature and reduces deviations, thereby improving operation accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional fuse is used in DRAM devices, then the device can perform read and write operations, but the resistance characteristics cause misjudgment in operations particularly at lower currents, leading to higher deviation proportional to temperature
Solution Approach 1:
The patent introduces a resistance modification doped region with specific dopant concentration (e.g., 1×10^19 to 1×10^21 atoms/cm³) that creates localized ohmic characteristics in the fuse structure. This local quality change ensures that the fuse region exhibits temperature-independent resistance behavior, resolving the measurement precision issue without affecting overall device operation
Solution Approach 2:
The patent modifies the resistance characteristics of the fuse by changing the dopant concentration in a specific region. By adjusting the dopant concentration to create an ohmic type fuse, the resistance becomes positively proportional to temperature rather than showing the conventional negative proportionality, thereby reducing deviation and improving measurement precision
2Reliability
If the resistance of the fuse is negatively proportional to temperature, then the fuse can conduct current, but this causes higher deviation in resistance and misjudgment in read and write operations
Solution Approach 1:
The patent changes the physical parameter of dopant concentration in the fuse region to transform the resistance-temperature relationship from negative proportionality to positive proportionality. This parameter change stabilizes the resistance characteristics, reducing deviation and preventing misjudgment in operations
Solution Approach 2:
The patent replaces the conventional fuse resistance mechanism (negatively proportional to temperature) with an ohmic type fuse mechanism (positively proportional to temperature). This substitution fundamentally changes the resistance stability behavior, eliminating the harmful negative temperature coefficient effect
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ohmic type fuse design reduces misjudgment in read and write operations by maintaining consistent resistance characteristics, enhancing the reliability of DRAM devices.
Implementation Method 1
a resistance modification doped region partially overlapping the fuse doped region. The fuse doped region and the resistance modification doped region have a first conductive type
Data Source
AI summary
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a well region positioned within the substrate; an isolation structure positioned in the well region; a fuse medium positioned over the well region; a gate electrode positioned over the fuse medium; a fuse doped region positioned under the fuse medium and within the well region; a source/drain region positioned adjacent to the fuse doped region; and a resistance modification doped region partially overlapping the fuse doped region. The fuse doped region and the resistance modification doped region have a first conductive type and the well region has a second conductive type different from the first conductive type.