OLED Active Layer Protection via Metal Oxide Conversion
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Solution Overview
Problem
Organic light emitting display (OLED) devices face performance and reliability issues due to inadequate protection of semiconductor elements, leading to unsatisfactory device quality.
Innovation Solution
The OLED device incorporates an oxide semiconductor active layer with inorganic buffer and gate insulation layers, and a protective insulating layer formed from the same metal material as the gate electrode, which provides oxygen to convert metal layers into metal oxide insulation layers, thereby protecting the active layer and minimizing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a semiconductor element is not sufficiently protected, then manufacturing costs are reduced, but quality, performance, and reliability of the semiconductor element deteriorate
Solution Approach 1:
The protective insulating layer is formed from the same metal material layer as the gate electrode, combining two protective functions into one material layer. This merging approach provides sufficient protection to the semiconductor element while avoiding the need for separate additional protective layers, thus reducing device complexity while maintaining reliability
Solution Approach 2:
The metal material layer serves multiple functions: it forms the gate electrode for controlling the semiconductor element and simultaneously forms the protective insulating layer that protects the semiconductor element from damage. This multi-functionality reduces the number of separate components needed while ensuring adequate protection
2Reliability
If additional protective layers and electrodes are added, then reliability improves, but manufacturing costs increase
Solution Approach 1:
By forming both the gate electrode and protective insulating layer from the same metal material layer through a single deposition process, the patent eliminates the need for separate deposition steps for additional protective layers. This merging of functions reduces manufacturing complexity and cost while providing adequate protection to the active layer
Solution Approach 2:
The metal material layer automatically serves dual purposes: creating the functional gate electrode and providing protective insulation. This self-service approach means the same material layer performs multiple roles without requiring additional materials or processing steps, thereby reducing manufacturing costs while improving reliability
3Reliability
If multiple separate layers are used for gate electrode and protective insulation, then functional performance improves, but device complexity increases
Solution Approach 1:
The patent merges the gate electrode and protective insulating layer into a single metal material layer that is patterned to create both functional and protective regions. This reduces the number of discrete layers from two separate depositions to one, simplifying the device structure while maintaining the electrical characteristics needed for proper semiconductor element operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively protects the active layer from process-related damages, maintains electrical characteristics, and reduces manufacturing costs by eliminating the need for additional electrodes and pixel defining layers.
Implementation Method 1
the buffer layer and the gate insulation layer may include inorganic materials having oxygen
Data Source
AI summary
An organic light emitting display device includes a substrate, a buffer layer, an active layer, a gate insulation layer, a protective insulating layer, a gate electrode, an insulating interlayer, source and drain electrodes, and a sub-pixel structure. The buffer layer is disposed on the substrate. The active layer is disposed on the buffer layer, and has a source region, a drain region, and a channel region. The gate insulation layer is disposed in the channel region on the active layer. The protective insulating layer is disposed on the buffer layer, the source and drain regions of the active layer, and the gate insulation layer. The gate electrode is disposed in the channel region on the protective insulating layer. The insulating interlayer is disposed on the gate electrode. The source and drain electrodes are disposed on the insulating interlayer.