OLED Array Substrate Layout for High-Brightness White Balance

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Solution Overview

Problem

Current vehicle display devices face challenges in achieving high brightness due to differences in brightness ratios of red, green, and blue light, leading to insufficient blue light emission when channel width-length ratios of driving transistors are uniformly designed, restricting maximum brightness.

Innovation Solution

An array substrate with a base substrate featuring repeating units of blue, red, and green sub-pixels, where the channel width-length ratio of the driving transistor for the blue sub-pixel is greater than that of the red and green sub-pixels, optimized to ensure balanced white light emission at high brightness levels.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If channel width-length ratios of driving transistors are uniformly designed for all color sub-pixels, then manufacturing process is simplified, but blue light emission becomes insufficient at high brightness levels

Engineering Contradiction:
Improveuniform transistor designVSAvoidblue light emission
Core Design Contradiction:
Ease of manufactureVSIllumination intensity

Solution Approach 1:

The patent applies local quality by differentiating the channel width-length ratios of driving transistors based on color sub-pixel characteristics. Specifically, blue sub-pixels are assigned a larger channel width-length ratio (e.g., 5/25) compared to red and green sub-pixels (e.g., 3/30), allowing each color to be optimized for its specific current efficiency requirements while maintaining manufacturing feasibility through standardized fabrication processes.

Inventive Principle:
Principle #3Local quality

2Illumination intensity

If channel width-length ratio of blue sub-pixel driving transistor is increased, then blue light emission is improved, but device complexity increases

Engineering Contradiction:
Improveblue light emissionVSAvoidtransistor ratio optimization
Core Design Contradiction:
Illumination intensityVSDevice complexity

Solution Approach 1:

The patent implements parameter changes by adjusting the channel width-length ratio parameter of driving transistors according to color-specific requirements. The blue sub-pixel driving transistor uses a larger ratio (5/25) to compensate for lower current efficiency, while red and green sub-pixels use a smaller ratio (3/30). This parameter optimization achieves balanced white light emission without requiring complex additional circuitry or structures.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances the brightness of the display device by optimizing the channel width-length ratios of driving transistors for each color sub-pixel, preventing insufficient blue light emission and maintaining white balance at high brightness levels.

Implementation Method 1

Organic light emitting diodes have advantages of self-luminescence, high efficiency, bright color, thin and light, power saving, curling, wide using temperature range

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS12069893B2Array substrate and manufacturing method therefor, display device and display substrate
Publication Date: 2024.08.20 CHENGDU BOE OPTOELECTRONICS TECH CO LTD
  • US12069893B2 patent drawing
  • US12069893B2 patent drawing
  • US12069893B2 patent drawing

AI summary

An array substrate and a manufacturing method therefor, an organic light emitting diode display device and a display substrate are provided. The array substrate includes: a base substrate and a first color sub-pixel and a second color sub-pixel on the base substrate. The first color sub-pixel includes a first driving transistor, the second color sub-pixel includes a second driving transistor, and a channel width-length ratio of the first driving transistor is greater than a channel width-length ratio of the second driving transistor.