Flexible OLED Barrier Layer Silicon Oxide Nitride Stack
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Solution Overview
Problem
Flexible flat display devices face challenges in preventing external impurities, such as moisture and oxygen, from penetrating into organic light-emitting devices due to the high water vapor transmission rate of plastic substrates and the potential peeling off of barrier layers during manufacturing.
Innovation Solution
An organic light-emitting device is designed with a barrier layer comprising alternately stacked silicon oxide and silicon nitride layers, where the silicon nitride layers have a refractive index of 1.81 to 1.85 and are formed with specific thickness and stress ranges, and the silicon oxide layers are silicon-rich, to reduce water vapor transmission and prevent peeling off.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a barrier layer is applied to prevent moisture penetration in flexible displays, then water vapor transmission rate is reduced, but the barrier layer may peel off during manufacturing
Solution Approach 1:
The patent applies composite materials by stacking multiple barrier layers with different compositions (silicon oxide and silicon nitride layers) to achieve both low water vapor transmission rate and sufficient adhesive strength. The alternating structure of hydrophilic silicon oxide layers and hydrophobic silicon nitride layers creates a composite barrier system that balances moisture protection with mechanical adhesion to the plastic substrate.
Solution Approach 2:
The barrier layer is segmented into multiple thin alternating layers of silicon oxide and silicon nitride rather than using a single thick layer. This segmentation allows each layer to contribute different properties: silicon oxide provides strong adhesion and moisture barrier, while silicon nitride provides stress management and additional barrier function, preventing peeling while maintaining low WVTR.
2Reliability
If a barrier layer is applied to protect TFT from external impurities, then device reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent uses composite materials (alternating silicon oxide and silicon nitride layers) to achieve effective impurity protection. While this creates a multi-layer structure, the systematic alternation of two well-known barrier materials provides both protection and manageability in manufacturing, as each layer can be deposited using standard PECVD processes.
Solution Approach 2:
The patent controls specific parameters of the barrier layers including thickness (50-200 nm per layer), silicon nitride composition (SiNx with x=1.1-1.3), and stress characteristics to optimize both protection performance and manufacturability. By precisely controlling these parameters, the complex multi-layer structure becomes manageable and reproducible in production.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces water vapor transmission rates and prevents barrier layer peeling, enhancing the durability and reliability of flexible organic light-emitting devices by improving adhesive forces and stress balance.
Implementation Method 1
the barrier layer includes a silicon oxide layer and a silicon nitride layer including SiNx (where x=about 1.1 to about 1.3)... effectively reduces water vapor transmission rates
Implementation Method 2
A stress of the silicon nitride layer may range from about −200 MPa to about 0 MPa... prevents barrier layer peeling
Data Source
AI summary
An organic light-emitting device including a barrier layer that includes a silicon oxide layer and a silicon-rich silicon nitride layer. The organic light-emitting device includes a flexible substrate that includes a barrier layer and plastic films disposed under and over the barrier layer. The barrier layer includes a silicon-rich silicon nitride layer and a silicon oxide layer. The order in which the silicon-rich silicon nitride layer and the silicon oxide layer are stacked is not limited and the silicon oxide layer may be first formed and then the silicon-rich silicon nitride layer may be stacked on the silicon oxide layer. The silicon-rich silicon nitride layer has a refractive index of 1.81 to 1.85.


