OLED Driving Semiconductor Layer with Bent Zigzag Structure

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing organic light emitting diode (OLED) displays face challenges in achieving high resolution and display quality due to limited control over grayscale and charge mobility, particularly in the driving range of gate voltage applied to transistors.

Innovation Solution

The OLED display incorporates a driving semiconductor layer with bent portions, forming a zigzag pattern to broaden the driving range of gate voltage, and includes a storage capacitor overlapping the driving semiconductor layer to ensure sufficient storage capacitance, while the peripheral switching transistor benefits from a first gate insulating layer for rapid switching operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a conventional flat semiconductor layer is used, then the device structure is simple, but the driving range of gate voltage is limited and grayscale control is insufficient

Engineering Contradiction:
Improvedriving range of gate voltageVSAvoidsemiconductor layer structure
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The semiconductor layer is designed with a bent configuration instead of a flat structure. The bending increases the effective area of the semiconductor layer that interacts with the gate electrode, thereby broadening the driving range of gate voltage and improving grayscale control capability without adding complex multi-layer structures.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Solution Approach 2:

The semiconductor layer is extended in the vertical dimension by creating bent portions that rise from the substrate plane. This dimensional change increases the interaction volume between the semiconductor layer and gate electrode, enhancing voltage control range while maintaining structural simplicity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If the resolution is increased, then the display quality is improved, but the storage capacitance becomes insufficient

Engineering Contradiction:
Improvedisplay resolutionVSAvoidstorage capacitance
Core Design Contradiction:
Manufacturing precisionVSQuantity of substance

Solution Approach 1:

The bent semiconductor layer configuration increases the effective storage area by creating additional vertical space. This allows the storage capacitor to maintain sufficient capacitance even when the pixel area is reduced for high resolution displays, as the bent structure provides extra volume for charge storage within the same footprint.

Inventive Principle:
Principle #14Spheroidality (Curvature)

3Measurement precision

If the semiconductor layer is bent to broaden driving range, then grayscale control is improved, but the manufacturing process becomes more complex

Engineering Contradiction:
Improvegrayscale control precisionVSAvoidsemiconductor layer fabrication
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The bent semiconductor layer is formed using standard thin-film deposition and patterning techniques. The curvature is achieved during the layer formation process itself, rather than requiring post-fabrication bending, thus maintaining ease of manufacture while achieving improved grayscale control precision through the increased effective area.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Data Source

PatentUS9767730B2Organic light emitting diode display and method of manufacturing the same
Publication Date: 2017.09.19 SAMSUNG DISPLAY CO LTD
  • US9767730B2 patent drawing
  • US9767730B2 patent drawing
  • US9767730B2 patent drawing

AI summary

An organic light emitting diode display includes a pixel portion displaying an image and a peripheral portion surrounding the pixel portion, a semiconductor layer including a pixel switching semiconductor layer on the pixel portion on the substrate, a being driving semiconductor layer, and a peripheral switching semiconductor layer on the peripheral portion, a first gate insulating layer on the semiconductor layer, a peripheral switching gate electrode on the first gate insulating layer of the peripheral portion, a second gate insulating layer covering the peripheral switching gate electrode and the first gate insulating layer, a pixel switching gate electrode and a driving gate electrode on the second gate insulating layer of the pixel portion, and a third gate insulating layer covering the pixel switching gate electrode, the driving gate electrode, and the second gate insulating layer.