Blister Prevention Layer for OLED Gate Insulation Adhesion
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Solution Overview
Problem
Adhesion defects between the gate insulation layer and the indium tin oxide (ITO) layer in organic light-emitting display apparatuses lead to blistering issues, affecting the reliability and performance of the devices.
Innovation Solution
A blister prevention layer, formed at the same level as the activation layer with a surface having protrusions, is introduced to increase the contact area and disperse adhesion stress, preventing blistering between the interconnection unit and the gate insulation layer, which includes a polysilicon material and is formed simultaneously with the activation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a gate insulation layer is formed over an activation layer in an organic light-emitting display apparatus, then the gate electrode is insulated from the activation layer, but adhesion defects occur between the gate insulation layer and the indium tin oxide (ITO) layer causing blistering
Solution Approach 1:
The patent introduces an intermediate layer between the gate insulation layer and the ITO layer to prevent adhesion defects and blistering. This intermediate layer acts as a mediator that improves the bonding between the gate insulation layer and the ITO layer, eliminating the harmful blistering effect while maintaining the insulating function of the gate insulation layer.
Solution Approach 2:
The patent applies a preliminary treatment to the ITO layer before forming the gate insulation layer. This preliminary action prepares the ITO layer surface to enhance adhesion and prevent blistering, addressing the adhesion defect issue before the gate insulation layer is deposited.
2Reliability
If the gate insulation layer is formed to insulate the activation layer from the gate electrode, then electrical insulation is achieved, but structural integrity is compromised due to adhesion defects
Solution Approach 1:
The intermediate layer serves as a mediator that simultaneously maintains electrical insulation and improves structural integrity. It provides a stable bonding interface between the gate insulation layer and ITO layer, preventing blistering that would compromise structural integrity while preserving the electrical insulation function.
Solution Approach 2:
The patent employs a composite structure consisting of multiple layers including the gate insulation layer, intermediate layer, and ITO layer. This composite material approach combines the insulating properties of the gate insulation layer with the adhesion-enhancing properties of the intermediate layer, achieving both electrical insulation and structural integrity.
Data Source
AI summary
An OLED apparatus including a thin film transistor including an activation layer, a gate electrode insulated from the activation layer and including a lower gate electrode and an upper gate electrode, an interlayer insulation film covering the gate electrode, and a source and drain electrode on the insulation film and contacting the activation layer; an OLED including a pixel electrode electrically connected to the thin film transistor, an intermediate layer including an emissive layer, and an opposite electrode; a blister prevention layer on a same level as the activation layer; a gate insulation layer covering the activation layer and the blister prevention layer and insulating the activation layer from the gate electrode; and an interconnection unit including first and second layers on a portion of the gate insulation layer overlying the blister prevention layer, wherein the blister prevention layer protects the interconnection unit on the gate insulation layer from blistering.