OLED Storage Capacitor Curvature for Etching-Imbalance Prevention

The second storage electrode is designed with a curved edge instead of a straight edge, creating an asymmetric structure that prevents particle contamination and etching imbalances from causing short-circuits. The curved edge ensures uniform etching throughout the process, improving electrical characteristics while maintaining manufacturing feasibility.

The second storage electrode incorporates a curved edge geometry that eliminates sharp corners where particles tend to accumulate and where etching imbalances occur. This curvature design prevents short-circuits in the capacitor while maintaining a relatively simple manufacturing process.

The curved edge of the second storage electrode creates an asymmetric boundary that the pixel electrode follows, maximizing area utilization while avoiding the etching imbalance defects associated with straight edges and sharp corners.

The pixel electrode is designed to overlap specific regions of the curved edge where etching uniformity is maintained, while avoiding regions where etching imbalances could occur. This local optimization ensures both high area utilization and manufacturing precision.

The light emission control transistor and initialization voltage line are integrated into the existing pixel circuit architecture, allowing these additional components to perform multiple functions within the display system while minimizing overall device complexity.

The additional control transistors and voltage lines are merged with the existing capacitor and transistor configurations, creating a unified circuit design that improves electrical characteristics and display quality without proportionally increasing device complexity.